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PDF PF08103A Data sheet ( Hoja de datos )
| Número de pieza | PF08103A | |
| Descripción | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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PF08103A
MOS FET Power Amplifier Module
for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-685B (Z)
3rd Edition
Apr. 1999
Application
• Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz).
• For 4.8 V nominal battery use
Features
• 1 in / 2 out dual band amplifier
• Simple external circuit including output matching circuit
• Simple band switching and power control
• High gain 3stage amplifier : +4.5 dBm input
• Lead less thin & Small package : 11 × 13.75 × 1.8 mm
• High efficiency : 48% Typ at 34.5 dBm for E-GSM
36% Typ at 31.5 dBm for DCS1800
1 page  
PF08103A
Electrical Characteristics for GSM900 mode (Tc = 25°C)
Test conditions unless otherwise noted:
f = 880 to 915MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, VCTL = 2.0V, VCTL = 0.3V, Rg = Rl = 50Ω,
Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Frequency range
Control voltage range
Vapc control current
Total efficiency
2nd harmonic distortion
3rd harmonic distortion
4th~8th harmonic distortion
Input VSWR
Output power (1)
Output power (2)
Isolation
Isolation at
DCS RF-output
when GSM is active
Switching time
Stability
Load VSWR tolerance
Noise power
Slope Pout/Vapc
Symbol
f
Vapc
Iapc
ηT
2nd H.D.
3rd H.D.
4th~8th H.D.
VSWR (in)
Pout (1)
Pout (2)
—
—
tr, tf
—
—
Pnoise1
Pnoise2
Pnoise3
—
Min Typ Max
880 —
915
0.2 —
3.0
——3
43 48 —
— –45 –35
— –45 –35
— — –35
—2
3
35.0 35.7 —
33.0 34.0 —
— –40 –20
— –30 –20
—1
2
No parasitic oscillation
All spuriouses < –36 dBm
No degradation
or
Permanent degradation
— — –73
— — –85
— — –77
— — 200
Unit
MHz
V
mA
%
dBc
dBc
dBc
—
dBm
dBm
dBm
dBm
µs
—
—
dBm
dBm
dBm
dB/V
Test Condition
Vapc = 3.0V
Pout GSM = 34.5dBm,
Vapc = control
Vapc = 3.0V
Vdd = 4.2V, Vapc = 3.0V,
Tc = +85°C, Pin = +3dBm
Vapc = 0.2 V
Pout GSM = 34.5dBm (GSM mode)
Measured at f = 1760 to 1830MHz
Pout GSM = –15 to 35.0dBm
VDD = 4.2 to 6.3V, Pout ≤ 35.0dBm,
Vapc ≤ 3.0V GSM pulse.
Rg = 50Ω, Tc = –20 to +85°C,
Output VSWR = 6 : 1 All phases,
RES BW = 3MHz
VDD = 4.2 to 6.3V,
Pout GSM ≤ 35.0dBm,
Vapc ≤ 3.0V GSM pulse. Rg = 50Ω,
t = 30sec., Tc = –20 to +85°C,
Output VSWR = 10 : 1 All phases
f0 = 915MHz, frx = f0 +10MHz
Pout GSM = 35dBm, RES BW = 100kHz
f0 = 915MHz, frx = f0 +20MHz
Pout GSM = 35dBm, RES BW = 100kHz
frx = 1805 to 1880MHz
Pout GSM = 35dBm, RES BW = 100kHz
Pout GSM = 0 to 35dBm
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PF08103A.PDF ] | |
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