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PDF PF08103B Data sheet ( Hoja de datos )
| Número de pieza | PF08103B | |
| Descripción | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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PF08103B
MOS FET Power Amplifier Module
for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-785C (Z)
4th Edition
May 1999
Application
• Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz).
• For 3.5 V nominal battery use
Features
• 1 in / 2 out dual band amplifier
• Simple external circuit including output matching circuit
• Simple band switching and power control
• High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS
• Lead less thin & Small package : 11 × 13.75 × 1.8 mm
• High efficiency : 45% Typ at 35.0 dBm for E-GSM
35% Typ at 32.5 dBm for DCS1800
1 page  
PF08103B
Electrical Characteristics for DCS1800 mode (Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785MHz, V DD1 = V DD2 = 3.5V, Pin = +4.5dBm, VCTL = 0.1V, VCTL = 2.0V, Rg = Rl = 50Ω,
Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Frequency range
Control voltage range
Total efficiency
2nd harmonic distortion
3rd harmonic distortion
4th~8th harmonic distortion
Input VSWR
Output power (1)
Output power (2)
Symbol
f
Vapc
ηT
2nd H.D.
3rd H.D.
4th~8th H.D.
VSWR (in)
Pout (1)
Pout (2)
Min
1710
0.2
30
32.5
30.8
Typ
35
−45
−45
3
33
31.3
Max
1785
2.2
−35
−35
–35
4
Isolation
Switching time
Stability
−42 −37
tr, tf
1
2
No parasitic oscillation
Load VSWR tolerance
No degradation
Noise power
Slope Pout/Vapc
Phase shift
Total conversion gain
Pnoise
−77
200
20
−5
AM output
20
Unit Test Condition
MHz
V
% Pout DCS = 32.5dBm,
dBc Vapc = controlled
dBc
dBc
dBm Vapc = 2.2V
dBm VDD = 3.1V, Vapc = 2.2V,
Tc = +85°C
dBm Vapc = 0.2V
µs Pout DCS = 0 to 32.5dBm
VDD = 3.1 to 5.1V, Pout DCS ≤ 32.5dBm,
Vapc ≤ 2.2V DCS pulse.
Rg = 50Ω, Tc = 25°C,
Output VSWR = 6 : 1 All phases
VDD = 3.1 to 5.1V, Pout DCS ≤ 32.5dBm,
Vapc ≤ 2.2V DCS pulse. Rg = 50Ω,
t = 20sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
dBm
dB/V
deg/
dB
f0 = 1785MHz, frx = f0 +20MHz,
Pout DCS = 32.5dBm, RES BW = 100kHz
Pout DCS = 0 to 32dBm
Pout DCS = 31 to 32dBm
dB f0 = 1785MHz, (Pin = +4.5dBm)
Other sig. = 1765 MHz (−40dBc)
Pout DCS = 31dBm
% Pout DCS = 0dBm,
4%AM modulation at input
50kHz modulation frequency
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet PF08103B.PDF ] | |
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