PDF PF08127B Data sheet ( Hoja de datos )

Número de pieza	PF08127B
Descripción	MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
Fabricantes	ETC
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No Preview Available ! To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 1 page PF08127B Electrical Characteristics for E-GSM band (Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used. Item Frequency range Band select (GSM active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Symbol f Vctl Pin Vapc Vdd ηT 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) Min 880 2.0 –2 0.2 3.1 47     35.0 33.5 Typ   0  3.5 55 −15(–50) −10(–45)  1.5 36.0 34.5 Max 915 2.8 2 2.2 4.5  0(–35) 0(–35) 0(–35) 3   Idd at Low power Isolation Isolation at DCS RF-output when GSM is active Switching time Stability    tr, tf   300  −48 −37  −25 −18 1 2 No parasitic oscillation > –36 dBm Load VSWR tolerance  Load VSWR tolerance at GPRS CLASS 12 operation  No degradation or Permanent degradation No degradation or Permanent degradation Slope Pout/Vapc   160 200 AM output   15 20 Unit Test Condition MHz V dBm V V % dBm(dBc) Pout GSM = 35 dBm, Vapc = controlled dBm(dBc) dBm(dBc)  dBm Vapc = 2.2 V dBm Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C mA dBm Pout GSM = 7 dBm Vapc = 0.2 V dBm Pout GSM = 35 dBm, Measured at f = 1760 to 1830 MHz µs    dB/V % Pout GSM = 5 to 35 dBm Vdd = 3.1 to 4.5 V, Pout ≤ 35 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, Output VSWR = 6 : 1 All phase angles Vdd = 3.1 to 4.5 V, Pout GSM ≤ 35 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t ≤ 20 sec., Output VSWR = 10 : 1 All phase angles Vdd = 3.1 to 4.2 V, Pout GSM ≤ 35 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t ≤ 20 sec., Tc ≤ 90°C, Output VSWR = 10 : 1 All phase angles Pout GSM = 5 to 35 dBm Pout GSM = 5 to 35 dBm, 4% AM modulation at input 50 kHz modulation frequency Rev.0, Oct. 2002, page 3 of 14 5 Page DCS mode (1710MHz to 1785 MHz) DCS mode (1710 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 20 Vdd = 3.5 V 10 0 Vapc = control Tc = 25°C Pout 90 80 70 60 –10 Eff 50 –20 40 –30 30 –40 20 –50 10 –60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) PF08127B DCS mode (1785 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 20 Vdd = 3.5 V 10 0 Vapc = control Tc = 25°C –10 Pout 90 80 70 60 Eff 50 –20 40 –30 30 –40 20 –50 10 –60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) DCS mode (1710 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V 40 Vapc = control Tc = 25°C 30 20 10 0 0 5 10 15 20 25 30 Pout (dBm) 35 DCS mode (1785 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V 40 Vapc = control Tc = 25°C 30 20 10 0 0 5 10 15 20 25 30 Pout (dBm) 35 DCS mode (1710 MHz) Pout, Eff vs. Pin 34.5 Vdd = 3.5 V 34.0 Tc = 25°C Pout 60 55 33.5 50 33.0 Eff 45 32.5 Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 32.0 –10 –8 –6 –4 –2 0 2 4 6 Pin (dBm) 40 35 8 10 DCS mode (1785 MHz) Pout, Eff vs. Pin 34.5 Vdd = 3.5 V 34.0 Tc = 25°C 33.5 Pout 60 55 50 Eff 33.0 45 32.5 Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 32.0 –10 –8 –6 –4 –2 0 2 4 6 Pin (dBm) 40 35 8 10 Rev.0, Oct. 2002, page 9 of 14 11 Page

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