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M5M5V216AWG-55HI 데이터시트 PDF




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부품번호 M5M5V216AWG-55HI 기능
기능 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
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M5M5V216AWG-55HI 데이터시트, 핀배열, 회로
revision-01, ' 98.12.08
M5M5V216AWG
MITSUBISHI LSIs
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
FEATURES
The M5M5V216A is a family of low voltage 2-Mbit static RAMs
organized as 131,072-words by 16-bit, fabricated by Mitsubishi's
high-performance 0.25µm CMOS technology.
The M5M5V216A is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5V216AWG is packaged in a CSP (chip scale package),
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48pin)
and ball pitch of 0.75mm. It gives the best solution for a
compaction of mounting area as well as flexibility of wiring pattern
of printed circuit boards.
From the point of operating temperature, the family is divided
into three versions; "Standard", "W-version", and "I-version".
Those are summarized in the part name table below.
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,typ.)
No clocks, No refresh
Data retention supply voltage=2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S , BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prevents data contention in the I/O bus
Process technology: 0.25µm CMOS
Package: 48 pin 7.0mm x8.5mm CSP
PART NAME TABLE
Version,
Operating
temperature
Part name
M5M5V216AWG -55L
Standard
0 ~ +70 C
M5M5V216AWG -70L
M5M5V216AWG -55H
M5M5V216AWG -70H
M5M5V216AWG -55LW
W-version
-20 ~ +85 C
M5M5V216AWG -70LW
M5M5V216AWG -55HW
M5M5V216AWG -70HW
M5M5V216AWG -55L I
I-version
-40 ~ +85 C
M5M5V216AWG -70L I
M5M5V216AWG -55H I
M5M5V216AWG -70H I
PIN CONFIGURATION
(TOP VIEW)
1 2 3456
A BC1 OE A6 A3 A0 NC
B
DQ
16
BC2
A7
A2
S
DQ
1
C
DQ DQ
14 15
A5
A1
DQ
2
DQ
3
D
GND
DQ
13
NC
A4
DQ
4
Vcc
E
Vcc
DQ
12
GND A16
DQ
5
GND
F
DQ DQ
11 10
A9
A14
DQ
7
DQ
6
G
DQ
9
NC
A10 A13
W
DQ
8
H NC A8 A11 A12 A15 NC
Power
Supply
Access
time
max.
Stand-by current Icc(PD), Vcc=3.0V
typical *
Ratings (max.)
25 C 40 C 25 C 40 C 70 C 85 C
Active
current
Icc1
(3.0V, typ.)
55ns(@ 2.7V) / 50ns(@3.3V)
2.7 ~ 3.6V
70ns(@ 2.7V) / 65ns(@3.3V)
---
---
--- --- 20µA ---
2.7 ~ 3.6V
2.7 ~ 3.6V
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
0.3µA 1µA
--- ---
1µA
---
3µA 8µA ---
45mA
--- 20µA 50µA (10MHz)
55ns(@ 2.7V) / 50ns(@3.3V)
2.7 ~ 3.6V 70ns(@ 2.7V) / 65ns(@3.3V) 0.3µA 1µA
55ns(@ 2.7V) / 50ns(@3.3V)
2.7 ~ 3.6V
70ns(@ 2.7V) / 65ns(@3.3V)
---
---
1µA
---
3µA 8µA 24µA
--- 20µA 50µA
5mA
(1MHz)
55ns(@ 2.7V) / 50ns(@3.3V)
2.7 ~ 3.6V
0.3µA 1µA
70ns(@ 2.7V) / 65ns(@3.3V)
1µA
3µA 8µA 24µA
* "typical" parameter is sampled, not 100% tested.
(BOTTOM VIEW)
65 4321
A NC A0 A3 A6 OE BC1
B
DQ
1
S
A2
A7
BC2
DQ
16
C
DQ DQ
32
A1
A5
DQ
15
DQ
14
D
Vcc
DQ
4
A4
NC
DQ
13
GND
E
GND
DQ
5
A16 GND
DQ
12
Vcc
F
DQ
6
DQ
7
A14 A9
DQ
10
DQ
11
G
DQ
8
W
A13 A10 NC
DQ
9
H NC A15 A12 A11 A8 NC
Pin Function
A0 ~ A16 Address input
DQ1 ~ DQ16 Data input / output
S
W
OE
BC1
BC2
Vcc
Chip select input
Write control input
Output inable input
Lower Byte (DQ1 ~ 8)
Upper Byte (DQ9 ~ 16)
Power supply
GND Ground supply
Outline: 48FJA
NC: No Connection
MITSUBISHI ELECTRIC
1




M5M5V216AWG-55HI pdf, 반도체, 판매, 대치품
revision-01, ' 98.12.08
M5M5V216AWG
MITSUBISHI LSIs
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
AC ELECTRICAL CHARACTERISTICS (Vcc=2.7 ~ 3.6V, unless otherwise noted)
(1) TEST CONDITIONS
Supply voltage
Input pulse
Input rise time and fall time
Reference level
Output loads
2.7V~3.6V
VIH=2.2V,VIL=0.4V
5ns
VOH=VOL=1.5V
Transition is measured ±500mV from
steady state voltage.(for ten,tdis)
Fig.1,CL=30pF
CL=5pF (for ten,tdis)
1TTL
DQ
CL
Including scope and
jig capacitance
Fig.1 Output load
(2) READ CYCLE
Symbol
Parameter
tCR
ta(A)
ta(S)
ta(BC1)
ta(BC2)
ta(OE)
tdis(S)
tdis(BC1)
tdis(BC2)
tdis(OE)
ten(S)
ten(BC1)
ten(BC2)
ten(OE)
tV(A)
Read cycle time
Address access time
Chip select access time
Byte control 1 access time
Byte control 2 access time
Output enable access time
Output disable time after S high
Output disable time after BC1 high
Output disable time after BC2 high
Output disable time after OE high
Output enable time after S low
Output enable time after BC1 low
Output enable time after BC2 low
Output enable time after OE low
Data valid time after address
Limits
M5M5V216AWG - 55
Min Max
M5M5V216AWG - 70
Min Max
55 70
55 70
55 70
55 70
55 70
30 35
20 25
20 25
20 25
20 25
10 10
10 10
10 10
55
10 10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(3) WRITE CYCLE
Symbol
Parameter
tCW
tw(W)
tsu(A)
tsu(A-WH)
tsu(BC1)
tsu(BC2)
tsu(S)
tsu(D)
th(D)
trec(W)
tdis(W)
tdis(OE)
ten(W)
ten(OE)
Write cycle time
Write pulse width
Address setup time
Address setup time with respect to W
Byte control 1 setup time
Byte control 2 setup time
Chip select setup time
Data setup time
Data hold time
Write recovery time
Output disable time from W low
Output disable time from OE high
Output enable time from W high
Output enable time from OE low
Limits
M5M5V216AWG - 55
M5M5V216AWG - 70
Min Max Min Max
55 70
45 55
00
50 65
50 65
50 65
50 65
25 30
00
00
20 25
20 25
55
55
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MITSUBISHI ELECTRIC
4

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M5M5V216AWG-55HI 전자부품, 판매, 대치품
revision-01, ' 98.12.08
M5M5V216AWG
MITSUBISHI LSIs
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Vcc (PD) Power down supply voltage
VI (BC) Byte control input BC1 & BC2
VI (S)
Chip select input S
Icc (PD)
Power down
supply current
Vcc=3.0V
1)
BC1 and
S<= 0.2V
BC2
>=Vcc
-
0.2V
other inputs=0~3V
2)
S>= Vcc - 0.2V
other inputs=0~3V
-LW, -LI
-L, -LW, -LI
-HW, -HI
-H, -HW, -HI
-H
-HW
-HI
+70 ~ +85 C
+70 C
+70 ~ +85 C
+40 ~ +70 C
+25 ~ +40 C
0 ~ +25 C
-20 ~ +25 C
-40 ~ +25 C
(2) TIMING REQUIREMINTS
Symbol
Parameter
tsu (PD)
trec (PD)
Power down set up time
Power down recovery time
Test conditions
Limits
Min Typ
2.0
2.0
2.0
--
--
--
--
-1
- 0.3
- 0.3
- 0.3
Max
50
20
24
8
3
1
1
1
Units
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
Typical value is for Ta=25 C
Limits
Min Typ Max
0
5
Units
ns
ms
(3) TIMING DIAGRAM
BC control mode
Vcc
BC1
BC2
2.2V
tsu (PD)
2.7V
2.7V
BC1 , BC2 >=Vcc - 0.2V
trec (PD)
2.2V
S control mode
Vcc
tsu (PD)
2.2V
S
2.7V
2.7V
S >= Vcc - 0.2V
trec (PD)
2.2V
MITSUBISHI ELECTRIC
7

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부품번호상세설명 및 기능제조사
M5M5V216AWG-55H

2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM

Mitsubishi
Mitsubishi
M5M5V216AWG-55HI

2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM

Mitsubishi
Mitsubishi

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