Datasheet.kr   

M5M5W816WG-10HI 데이터시트 PDF




Mitsubishi에서 제조한 전자 부품 M5M5W816WG-10HI은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 M5M5W816WG-10HI 자료 제공

부품번호 M5M5W816WG-10HI 기능
기능 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
제조업체 Mitsubishi
로고 Mitsubishi 로고


M5M5W816WG-10HI 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 8 페이지수

미리보기를 사용할 수 없습니다

M5M5W816WG-10HI 데이터시트, 핀배열, 회로
1999.1.15 Ver. 0.1
MITSUBISHI LSIs
M5M5W816WG -85L, 10L, 85H, 10H
-85LI, 10LI, 85HI, 10HI
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Those are summarized in the part name table below.
DESCRIPTION
The M5M5W816 is a family of low voltage 8-Mbit static RAMs
organized as 524288-words by 16-bit, fabricated by Mitsubishi's
high-performance 0.18µm CMOS technology.
The M5M5W816 is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5W816WG is packaged in a CSP (chip scale package),
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It gives the best solution for a compaction
of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
From the point of operating temperature, the family is divided
into two versions; "Standard" and "I-version".
FEATURES
- Single 1.8~2.7V power supply
- Small stand-by current: 0.1µA (2.7V, typ.)
- No clocks, No refresh
- Data retention supply voltage =1.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1, S2, BC1 and BC2
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prevents data contention in the I/O bus
- Process technology: 0.18µm CMOS
- Package: 48ball 7.0mm x 8.5mm CSP
Version,
Operating
temperature
Standard
0 ~ +70°C
I-version
-40 ~ +85°C
Part name
M5M5W816WG -85L
M5M5W816WG -10L
M5M5W816WG -85H
M5M5W816WG -10H
M5M5W816WG -85LI
M5M5W816WG -10LI
M5M5W816WG -85HI
M5M5W816WG -10HI
Power
Supply
1.8 ~ 2.7V
1.8 ~ 2.7V
1.8 ~ 2.7V
1.8 ~ 2.7V
PIN CONFIGURATION
(TOP VIEW)
Access time
max.
85ns
100ns
85ns
100ns
85ns
100ns
85ns
100ns
Stand-by current (Vcc=2.7V)
* Typical
Ratings (max.)
25°C 40°C 25°C 40°C 70°C 85°C
0.1 0.2 --- --- 16 ---
0.1 0.2 1 2 8 ---
0.1 0.2 --- --- 16 30
0.1 0.2 1 2 8 15
Active
current
Icc1
(2.7V, typ.)
40mA
(10MHz)
5mA
(1MHz)
* Typical parameter indicates the value for the center
of distribution, and not 100% tested.
1 23 456
A BC1 OE A0 A1 A2 S2
B DQ9 BC2 A3 A4 S1 DQ1
C DQ10 DQ11 A5
A6 DQ2 DQ3
D GND DQ12 A17 A7 DQ4 VCC
E VCC DQ13 GND A16 DQ5 GND
F DQ15 DQ14 A14 A15 DQ6 DQ7
G DQ16 N.C. A12 A13
W DQ8
H A18 A8 A9 A10 A11 N.C.
Outline: 48FHA
NC: No Connection
Pin Function
A0 ~ A18 Address input
DQ1 ~ DQ16 Data input / output
S1 Chip select input 1
S2 Chip select input 2
W Write control input
OE Output enable input
BC1 Lower Byte (DQ1 ~ 8)
BC2 Upper Byte (DQ9 ~ 16)
Vcc Power supply
GND Ground supply
MITSUBISHI ELECTRIC
1




M5M5W816WG-10HI pdf, 반도체, 판매, 대치품
1999.1.15 Ver. 0.1
MITSUBISHI LSIs
M5M5W816WG -85L, 10L, 85H, 10H
-85LI, 10LI, 85HI, 10HI
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
AC ELECTRICAL CHARACTERISTICS (Vcc=1.8 ~ 2.7V, unless otherwise noted)
(1) TEST CONDITIONS
Supply voltage
Input pulse
Input rise time and fall time
Reference level
Output loads
1.8~2.7V
VIH=0.7 x Vcc, VIL=0.2V
5ns
VOH=VOL=0.9V
Transition is measured ±200mV from
steady state voltage.(for ten,tdis)
Fig.1,CL=30pF
CL=5pF (for ten,tdis)
DQ
1TTL
CL
Including scope and
jig capacitance
Fig.1 Output load
(2) READ CYCLE
Symbol
Parameter
tCR
ta(A)
ta(S1)
ta(S2)
ta(BC1)
ta(BC2)
ta(OE)
tdis(S1)
tdis(S2)
tdis(BC1)
tdis(BC2)
tdis(OE)
ten(S1)
ten(S2)
tdis(BC1)
tdis(BC2)
ten(OE)
tV(A)
Read cycle time
Address access time
Chip select 1 access time
Chip select 2 access time
Byte control 1 access time
Byte control 2 access time
Output enable access time
Output disable time after S1 high
Output disable time after S2 low
Output disable time after BC1 high
Output disable time after BC2 high
Output disable time after OE high
Output enable time after S1 low
Output enable time after S2 high
Output enable time after BC1 low
Output enable time after BC2 low
Output enable time after OE low
Data valid time after address
(3) WRITE CYCLE
Symbol
tCW
tw(W)
tsu(A)
tsu(A-WH)
tsu(BC1)
tsu(BC2)
tsu(S1)
tsu(S2)
tsu(D)
th(D)
trec(W)
tdis(W)
tdis(OE)
ten(W)
ten(OE)
Parameter
Write cycle time
Write pulse width
Address setup time
Address setup time with respect to W
Byte control 1 setup time
Byte control 2 setup time
Chip select 1 setup time
Chip select 2 setup time
Data setup time
Data hold time
Write recovery time
Output disable time from W low
Output disable time from OE high
Output enable time from W high
Output enable time from OE low
Limits
85L, 85H,
10L, 10H,
85LI, 85HI
10LI, 10HI
Min Max Min Max
85 100
85 100
85 100
85 100
85 100
85 100
45 50
30 35
30 35
30 35
30 35
30 35
10 10
10 10
10 10
10 10
55
10 10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Limits
85L, 85H,
85LI, 85HI
10L, 10H,
10LI, 10HI
Min Max Min Max
85 100
60 75
Units
ns
ns
0 0 ns
70 85 ns
70 85 ns
70 85 ns
70 85 ns
70 85 ns
45 50 ns
0 0 ns
0 0 ns
30 35 ns
30 35 ns
5 5 ns
5 5 ns
MITSUBISHI ELECTRIC
4

4페이지










M5M5W816WG-10HI 전자부품, 판매, 대치품
1999.1.15 Ver. 0.1
MITSUBISHI LSIs
M5M5W816WG -85L, 10L, 85H, 10H
-85LI, 10LI, 85HI, 10HI
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Write cycle (S1 control mode)
tCW
A0~18
BC1,BC2
S1
(Note3)
tsu (A)
tsu (S1)
trec (W)
(Note3)
S2
(Note3)
(Note5)
W
(Note3)
DQ1~16
Write cycle (S2 control mode)
A0~18
BC1,BC2
S1
(Note3)
tsu (A)
(Note4)
tsu (D) th (D)
DATA IN
STABLE
tCW
tsu (S2)
trec (W)
(Note3)
(Note3)
(Note3)
S2
W
DQ1~16
(Note3)
(Note5)
(Note3)
(Note4)
tsu (D) th (D)
DATA IN
STABLE
(Note3)
(Note3)
MITSUBISHI ELECTRIC
7

7페이지


구       성 총 8 페이지수
다운로드[ M5M5W816WG-10HI.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
M5M5W816WG-10H

8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

Mitsubishi
Mitsubishi
M5M5W816WG-10HI

8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

Mitsubishi
Mitsubishi

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵