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PDF M5M5Y5636TG-22 Data sheet ( Hoja de datos )

Número de pieza M5M5Y5636TG-22
Descripción 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
Fabricantes Mitsubishi 
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2001.June Rev.0.0
Advanced Information
Notice: This is not final specification.
Some parametric limits are subject to change.
MITSUBISHI LSIs
M5M5Y5636TG – 25,22,20
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
DESCRIPTION
The M5M5Y5636TG is a family of 18M bit synchronous SRAMs
organized as 524288-words by 36-bit. It is designed to eliminate
dead bus cycles when turning the bus around between reads and
writes, or writes and reads. Mitsubishi's SRAMs are fabricated
with high performance, low power CMOS technology, providing
greater reliability. M5M5Y5636TG operates on a single 1.8V
power supply and are 1.8V CMOS compatible.
FEATURES
• Fully registered inputs and outputs for pipelined operation
• Fast clock speed: 250, 225, and 200 MHz
• Fast access time: 2.6, 2.8, 3.2 ns
• Single 1.8V +150/-100mV power supply VDD
• Separate VDDQ for 1.8V I/O
• Individual byte write (BWa# - BWd#) controls may be tied
LOW
• Single Read/Write control pin (W#)
• Echo Clock outputs track data output drivers
• ZQ mode pin for user-selectable output drive strength
• 2 User programmable chip enable inputs for easy depth
expansion
• Linear or Interleaved Burst Modes
• JTAG boundary scan support
APPLICATION
High-end networking products that require high bandwidth, such
as switches and routers.
FUNCTION
Synchronous circuitry allows for precise cycle control triggered
by a positive edge clock transition.
Synchronous signals include : all Addresses, all Data Inputs,
all Chip Enables (E1#, E2, E3), Address Advance/Load (ADV),
Byte Write Enables (BWa#, BWb#, BWc#, BWd#), Echo Clock
outputs (CQ1, CQ1#, CQ2, CQ2#) and Read/Write (W#). Write
operations are controlled by the eight Byte Write Enables (BWa#
- BWd#) and Read/Write(W#) inputs. All writes are conducted
with on-chip synchronous self-timed write circuitry.
The Echo Clocks are delayed copies of the RAM clock, CLK.
Echo Clocks are designed to track changes in output driver
delays due to variance in die temperature and supply voltage.
The ZQ pin supplied with selectable impedance drivers, allows
selection between nominal drive strength (ZQ LOW) for multi-
drop bus application and low drive strength (ZQ floating or HIGH)
point-to-point applications.
The sense of two User-Programmable Chip Enable inputs (E2,
E3), whether they function as active LOW or active HIGH inputs,
is determined by the state of the programming inputs, EP2 and
EP3.
The Linear Burst order (LBO#) is DC operated pin. LBO# pin
will allow the choice of either an interleaved burst, or a linear
burst.
All read, write and deselect cycles are initiated by the ADV
Low input. Subsequent burst address can be internally generated
as controlled by the ADV HIGH input.
PACKAGE
M5M5Y5636TG
Bump
209(11X19) bump BGA
Body Size
14mm X 22mm
Bump Pitch
1mm
PART NAME TABLE
Part Name
M5M5Y5636TG -25
M5M5Y5636TG -22
M5M5Y5636TG -20
Frequency
250MHz
225MHz
200MHz
Access
2.6ns
2.8ns
3.2ns
Cycle
4.0ns
4.4ns
5.0ns
Active Current
(max.)
400mA
380mA
360mA
Standby Current
(max.)
20mA
20mA
20mA
1
MITSUBISHI
Advanced Information
ELECTRIC
M5M5Y5636TG REV.0.0

1 page




M5M5Y5636TG-22 pdf
MITSUBISHI LSIs
M5M5Y5636TG – 25,22,20
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
Read Operation
Pipelined Read
Read operation is initiated when the following conditions are satisfied at the rising edge of clock: All three chip enables (E1#, E2 and E3)
are active, the write enable input signal (W#) is deasserted high, and ADV is asserted low. The address presented to the address inputs
is latched into the address register and presented to the memory core and control logic. The control logic determines that a read access
is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge of clock the read data
is allowed to propagate through the output register and onto the output pins.
CLK
E1#
ADV
W#
BWx#
ADD
DQ
CQ
A
Read A
Deselect
B
Q(A)
Read B
CDE
Q(B)
Q(C)
Read C
Read D
Read E
5
MITSUBISHI
Advanced Information
ELECTRIC
M5M5Y5636TG REV.0.0

5 Page





M5M5Y5636TG-22 arduino
MITSUBISHI LSIs
M5M5Y5636TG – 25,22,20
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
Pipelined Read Bank Switch with E1# Deselect
CLK
ADD
A
BCDE
E1#
E2# Bank1
E2 Bank2
DQ
Bank1
CQ
Bank1
CQ Bank1
+ CQ Bank2
CQ
Bank2
DQ
Bank2
Q(A)
Q(B)
Q(C)
Note10. E1# does not deselect the Echo Clock Outputs. Echo Clock outputs are synchronously
deselected by E2 or E3 being sampled false.
In some applications it may be appropriate to pause between banks; to deselect both SRAMs with E1# before resuming read
operations. An E1# deselect at a bank switch will allow at least one clock to be issued from the new bank before the first read cycle
in the bank. Although the following drawing illustrates a E1# read pause upon switching from Bank 1 to Bank 2, a write to Bank 2
would have the same effect, causing the SRAM in Bank 2 to issue at least one clock before it is needed.
Output Driver Impedance Control
The ZQ pin of SRAMs supplied with selectable impedance drivers, allows selection between SRAM nominal drive strength
(ZQ low) for multi-drop bus applications and low drive strength (ZQ floating or high) point-to-point applications.
11
MITSUBISHI
Advanced Information
ELECTRIC
M5M5Y5636TG REV.0.0

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