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Número de pieza | PH2729-150M | |
Descripción | Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty | |
Fabricantes | Tyco Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PH2729-150M (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! PH2729-150M
Radar Pulsed Power Transistor—150 Watts
2.7-2.9 GHz, 100µs Pulse, 10% Duty
Features
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metallization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
Outline Drawing1
Description
M/A-COM’s PH2729-150M is a silicon bipolar NPN transistor
specifically designed for use in high efficiency, common base,
Class C microwave power amplifiers. It is ideally suited for S-
Band radar and pulsed power applications where the highest
gain and saturated power are required. The flanged ceramic
package provides for excellent thermal and hermetic properties,
which when combined with M/A-COM’s mature transistor fab-
rication technology results in the highest reliability available.
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PD
TSTG
TJ
Rating
65
3.0
15.0
500
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications at 25°C=
Symbol
BVCES
ICES
RTH(JC)
POUT
GP
η
RL
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
OD-S Overdrive Stability (Osc.)
VSWR-T Load Mismatch Tolerance
VSWR-S Load Mismatch Stability
Test Conditions
IC = 40 mA
VCE = 38 V
VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz
VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz
VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz
VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz
VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz
VCC = 38 V, PIN = 27.5 W, f = 2.7, 2.8, 2.9 GHz
VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz
VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz
Min Max Units
65 - V
- 7.5 mA
- 0.4 °C/W
150 - W
8.3 - dB
38 - %
10 - dB
- 60 dBc
- 2:1 -
-
1.5:1
-
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet PH2729-150M.PDF ] |
Número de pieza | Descripción | Fabricantes |
PH2729-150M | Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty | Tyco Electronics |
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