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PDF PH2856-160 Data sheet ( Hoja de datos )
| Número de pieza | PH2856-160 | |
| Descripción | Linear Accelerator Pulsed Power Transistor/ 16OW/ 12ms Pulse/ 10% Duty 2.856 GHz | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty
2.856 GHz
PH2856-160
Features
l NPN Silicon Microwave Power Transistor
l Common Base Configuration
l Class C Operation
l High Efficiency Interdigitated Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Internal Input and Output Impedance Matching
l Hermetic-Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
Emitter-Base Voltage
VEBO
] Collector Current (Peak) ) lr 1
Total Power Dissipation
JunctionTemperature
PTOT
T,
65
3.0
15.0
700
200
V
V
I*
W
“C
I
StorageTemperature
TSTG -65 to +200
“C
<?.?9'.25)
Electrical Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
at 25°C
Symbol
BVCES
‘Es
RTHIJC)
PIN
GP
%
RL
VSWR-T
Min
65
7.5
40
6
-
Max
-
7.5
0.25
28.5
-
-
-
3:l
Units
Test Conditions
V I,=40 mA
mA V,,=36 V
“C/W V,,=40 V, PO,=1 60 W, F=2.856 GHz
w V,,=40 V, PO,,=160 W, F=2.856 GHz
dB V,,=40 V, PO,=160 W, F=2.856 GHz
% V,,=40 V, PO,,=160 W, F=2.856 GHz
dB V,,=40 V, PO& 60 W, F=2.856 GHz
- V,,=40 V, PO,,=160 W, F=2.856 GHz
Test Fixture Impedance
F(GHz)
2.856
Z,(Q)
4.4 - j4.9
q,,(n)
4.6-j1.6
TEST GXTURE
:N=Vi
CIRCU!T
L-
50R
--
21: 3-r
YESi FIXTURE
0ur=v7
CIRCUIT
-i
--ZOF
-5cOR
L-
Specifications Subject to Change Without Notice.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PH2856-160.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PH2856-160 | Linear Accelerator Pulsed Power Transistor/ 16OW/ 12ms Pulse/ 10% Duty 2.856 GHz | Tyco Electronics |
| PH2856-160 | Radar Pulsed Power Transistor 160W |  M/A-COM Technology |
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