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PDF PH3134-2OL Data sheet ( Hoja de datos )
| Número de pieza | PH3134-2OL | |
| Descripción | Radar Pulsed Power Transistor/ 2OW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty
3.1 - 3.4 GHz
PH3134-2OL
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic-Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter
( Symbol 1 Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
Junction Temperature
StorageTemperature
V ES
v EBO
‘c
P TOT
TJ
T Sit
65
3.0
2.4
146
200
-65 to +200
Units
V
V
A
w
1 “C
“C
:2.54)
.I672 010
i
LIN:;SS 3T”ERV!SE
ID0
(2.54) -
I-
..^^ !
-.I. -
304s 301
--J-f
1
.06o='.oozJ
~1.52Z.05)
NC;D,
TOLERbNCS
A?E INCKS k.005’
(M!cLIMETERS
z.13MM)
Electrical Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load MismatchTolerance
at 25°C
1 Symbol ( Min ( Max 1 Units (
TestConditions
BV,,,
65 - V I,=10 mA
‘CES
RTHUCI
PIN
GP
‘lC
RL
-
7.5
35
6
1.5 mA vc,=40 v
1.2 “CM’ V,,=36 V, P,,f20 W, Fz3.1, 3.25,3.4 GHz
3.56 W V,,=36 V, P0UT=2OW, F=3.1, 3.25,3.4 GHz
- dB Vct=36 V, PO,,=20 W, Fz3.1, 3.25, 3.4 GHz
- % V,,=36 V, PO,,=20 W, Fz3.1, 3.25, 3.4 GHz
- dB ‘I,,=36 V, P,,e20 W, F=3.1,3.25,3.4 GHz
VSWR-T
-
2:l
- V,,=36 V, Pour=20 W, F=3.25 GHz
Specifications Subject to Change Without Notice.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PH3134-2OL.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| PH3134-2OL | Radar Pulsed Power Transistor/ 2OW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz | Tyco Electronics |
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