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PDF MA02303GJ-R7 Data sheet ( Hoja de datos )
| Número de pieza | MA02303GJ-R7 | |
| Descripción | RF Power Amplifier IC for 2.4 GHz ISM | |
| Fabricantes | Tyco | |
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RF Power Amplifier IC
for 2.4 GHz ISM
Features
• Perfect for 802.11B, HOP, SWAP, HOMERF,
Bluetooth, WDECT, MDS, MMDS
• Single Positive Supply
• Power Added Efficiency As High As 55 Percent
• IP3 = +43 dBm
• Output Power 26.5 dBm @ 3.3 V
• Output Power 28.5 dBm @ 5.0 V
• 100 Percent Duty Cycle
• 2200 to 2600 MHz Operation
• 8 Pin MSOP Full Downset Plastic Package
• Operates Over Wide Ranges of Supply Voltage
• Self-Aligned MSAG®-Lite MESFET Process
Functional Schematic
PIN 1
PIN 8
Description
The MA02303GJ is an RF power amplifier based on
M/A-COM’s Self-Aligned MSAG® MESFET Process.
This product is designed for use in 2.4 GHz ISM
products. For booster applications, it features a low
power “bypass” mode and output power control
Ordering Information
Part Number
Description
MA02303GJ-R7
7 inch, 1000 piece reel
MA02303GJ-R13
13 inch, 3000 piece reel
MA02303GJ-SMB
Sample test board
PIN Configuration
PIN Function
1 VD1
2 RFIN / VG1
3 GND
4 VG2
5 VG3
6 GND
7 RFOUT / VD3
8 VD2
Description
Drain voltage, first stage
RF input and drain
voltage for first stage
Ground
Gate bias voltage,
second stage
Gate bias voltage,
third stage
Ground
RF output and drain
voltage for third stage
Drain voltage for
second stage
Package bottom is electrical and thermal ground
Absolute Maximum Ratings 1
Rating
Symbol Value
Unit
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
VDD
PIN
TJ
TSTG
5.5
10
150
-40 to +150
V
mW
°C
°C
Operating Temperature TOPER -40 to +100
°C
Moisture Sensitivity
JEDEC Level 1
1. Beyond these limits, the device may be damaged or device reliability
reduced. Functional operation at absolute-maximum-rated conditions is
not implied.
1 page  
RF Power Amplifier IC for 2.4 GHz ISM
Mechanical Data
MA02303GJ
Figure 11 Component layout and printed circuit drawing for evaluation board (60 mil GETEK
board).
Application Information
+VDD
RFIN
C1
T1
T2
L1
C2
T7
R1
T3
1
2
3
T4 4
C3
C4
3
8
T8
7
6
5
L2
T5
C5
RFOUT
T6
C6
Figure 12 Evaluation Board Schematic
Full-Downset Paddle
To Board Ground
List of Components
Discrete Components
C1 – C4 = 100 pF multilayer ceramic chip capacitor
(Dielectric Labs C11AH101K5TXL)
C5 = 2.0 pF multilayer ceramic chip capacitor
(Dielectric Labs C11AH2R0BTXL)
C6 = 1.2 pF multilayer ceramic chip capacitor
(Dielectric Labs C11AH1R2B5TXL)
R1 = 300 Ω chip resistor (P300ECT-ND)
L1 = 1.8 nH chip inductor (Toko TKS235CT-ND)
L2 = 27 nH chip inductor (Coilcraft 1008CS-270XKBB)
Transmission Line Lengths*
T1 = 0.15"
T2 = 0.21"
T3 = 0.11" (Not very critical)
T4 = 0.16"
T5 = 0.13"
T6 = 0.16"
T7 = 0.13" (Not very critical)
T8 = 0.077" (Not very critical)
T1, T2, T3, T5, T6 are 0.077" wide
T4, T7, and T8 are 0.026" wide
*The board material is 0.060" FR-4 (distance is between RF and GND) with a dielectric constant of
about 4.3 (standard FR-4)
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MA02303GJ-R7.PDF ] | |
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