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PDF MA111 Data sheet ( Hoja de datos )
| Número de pieza | MA111 | |
| Descripción | Switching Diodes | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MA111 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Switching Diodes
MA2J111
Silicon epitaxial planar type
For switching circuits
I Features
• Small S-mini type package, allowing high-density mounting
• Short reverse recovery time trr
• Small terminal capacitance, Ct
• High breakdown voltage (VR = 80 V)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Average forward current
Peak forward current
Non-repetitive peak forward
surge current*
VR
VRM
IF(AV)
IFM
IFSM
80
80
100
225
500
Junction temperature
Storage temperature
Note) * : t = 1 s
Tj 150
Tstg −55 to +150
Unit
V
V
mA
mA
mA
°C
°C
Unit : mm
KA
21
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 1B
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF
VR
Ct
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Conditions
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
100
0.95 1.2
80
0.6 1.2
3
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Unit
nA
V
V
pF
ns
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA111.PDF ] | |
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