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PDF PHE13005 Data sheet ( Hoja de datos )
| Número de pieza | PHE13005 | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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PHE13005
Silicon diffused power transistor
21 January 2014
Product data sheet
1. General description
High voltage, high speed NPN planar-passivated power switching transistor in a SOT78
plastic package intended for use in high frequency electronic lighting ballast applications
2. Features and benefits
• Fast switching
• High voltage capability of 700 V
• Low thermal resistance
3. Applications
• Electronic lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IC
collector current
DC; Fig. 4; Fig. 1; Fig. 2
Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3
VCESM
collector-emitter peak VBE = 0 V
voltage
Static characteristics
hFE
DC current gain
IC = 1 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11
IC = 2 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11
Min Typ Max Unit
- - 4A
- - 75 W
- - 700 V
12 20 40
10 17 28
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PHE13005
Silicon diffused power transistor
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Dynamic characteristics
ts
storage time
IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A;
RL = 75 Ω; Tmb = 25 °C; resistive load;
Fig. 12; Fig. 13
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tmb = 25 °C; inductive load;
Fig. 14; Fig. 15
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tmb = 100 °C; inductive
load; Fig. 14; Fig. 15
tf fall time
IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A;
RL = 75 Ω; Tmb = 25 °C; resistive load;
Fig. 12; Fig. 13
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tmb = 25 °C; inductive load;
Fig. 14; Fig. 15
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tmb = 100 °C; inductive
load; Fig. 14; Fig. 15
Static characteristics
ICES collector-emitter cut-off VBE = -1.5 V; VCE = 700 V; Tj = 25 °C
current
VBE = -1.5 V; VCE = 700 V; Tj = 100 °C
ICBO collector-base cut-off VCB = 700 V; IE = 0 A; Tmb = 25 °C
current
ICEO collector-emitter cut-off VCE = 400 V; IB = 0 A; Tmb = 25 °C
current
IEBO
emitter-base cut-off
VEB = 9 V; IC = 0 A; Tmb = 25 °C
current
VCEOsus
collector-emitter
sustaining voltage
IB = 0 A; IC = 10 mA; LC = 25 mH;
Tmb = 25 °C; Fig. 6; Fig. 7
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 0.2 A; Tmb = 25 °C; Fig. 8;
Fig. 9
IC = 2 A; IB = 0.5 A; Tmb = 25 °C; Fig. 8;
Fig. 9
IC = 4 A; IB = 1 A; Tmb = 25 °C; Fig. 8;
Fig. 9
VBEsat
base-emitter saturation IC = 1 A; IB = 0.2 A; Tmb = 25 °C;
voltage
Fig. 10
PHE13005
All information provided in this document is subject to legal disclaimers.
Product data sheet
21 January 2014
Min Typ Max Unit
-
2.7 4
µs
-
1.2 2
µs
-
1.4 4
µs
- 0.3 0.9 µs
- 0.1 0.5 µs
- 0.16 0.9 µs
--
--
--
--
--
400 -
1 mA
5 mA
1 mA
0.1 mA
1 mA
-V
- 0.1 0.5 V
- 0.2 0.6 V
-
0.3 1
V
- 0.85 1.2 V
© NXP N.V. 2014. All rights reserved
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NXP Semiconductors
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
11.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PHE13005
Silicon diffused power transistor
PHE13005
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 January 2014
© NXP N.V. 2014. All rights reserved
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