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PDF PHE13009 Data sheet ( Hoja de datos )
| Número de pieza | PHE13009 | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
PHE13009
GENERAL DESCRIPTION
The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFEsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
CONDITIONS
VBE = 0 V
Tmb ≤ 25 ˚C
IC = 5.0 A;IB = 1.0 A
IC = 5.0 A; VCE = 5 V
IC = 5.0 A; IB1 = 1.0 A
TYP.
-
-
-
-
-
-
0.32
-
0.1
MAX.
700
700
400
12
24
80
1.0
40
0.5
UNIT
V
V
V
A
A
W
V
µs
PINNING - TO220AB
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
12
24
6
12
80
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
60
MAX.
1.56
-
UNIT
K/W
K/W
March 1999
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
PHE13009
IC/A
14
12
10
8
6
-5V
4 -3V
2 -1V
0
0
100
200
300 400 500 600
VCEclamp/V
700
800
900
Fig.13. Reverse bias safe operating area (Tj < Tjmax)
for -Vbe = 5V,3V and 1V.
VCC
LC
IBon LB
VCL(RBSOAR)
PROBE POINT
-VBB T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
Vclamp < 700V; Vcc = 150V; -Vbe = 5V,3V & 1V;
LB = 1µH; LC = 200µH
March 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet PHE13009.PDF ] | |
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