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PDF PHP3055E Data sheet ( Hoja de datos )
| Número de pieza | PHP3055E | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHP3055E, PHD3055E
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 55 V
ID = 10.3 A
RDS(ON) ≤ 150 mΩ (VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT428 (DPAK)
PIN DESCRIPTION
1 gate
tab
tab
2 drain1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
± 20
10.3
7.3
41
33
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT428 package
August 1999
1
Rev 1.200
1 page  
Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHP3055E PHD3055E
Drain current, ID (A)
10
9 VDS > ID X RDS(ON)
8
7
6
5
4
3
175 C
2
1 Tj = 25 C
0
01234567
Gate-source voltage, VGS (V)
8
9
Fig.7. Typical transfer characteristics.
ID = f(VGS)
10
Transconductance, gfs (S)
4
VDS > ID X RDS(ON)
3.5
3
Tj = 25 C
2.5
175 C
2
1.5
1
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Drain current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Normalised On-state Resistance
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
Threshold Voltage, VGS(TO) (V)
4.5
4 maximum
3.5
3 typical
2.5
2 minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1.0E-01 Drain current, ID (A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Capacitances, Ciss, Coss, Crss (pF)
1000
Ciss
100
Coss
Crss
10
0.1
1 10
Drain-Source Voltage, VDS (V)
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1999
5
Rev 1.200
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PHP3055E.PDF ] | |
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