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Número de pieza | PHP3N50E | |
Descripción | PowerMOS transistors Avalanche energy rated | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PHP3N50E (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP3N50E, PHB3N50E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 3.4 A
RDS(ON) ≤ 3 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHP3N50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB3N50E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN DESCRIPTION
1 gate
tab
tab
2 drain 1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
3.4
2.2
14
83
150
UNIT
V
V
V
A
A
A
W
˚C
December 1998
1
Rev 1.200
1 page Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
8 ID, Drain current (Amps)
VDS > ID x RDS(on)max
7
PHP3N50
6
5
4
3
2
1 Tj = 150 C
Tj = 25 C
0
0 2 4 6 8 10
VGS, Gate-Source voltage (Volts)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
gfs, Transconductance (S)
3
VDS > ID x RDS(on)max
2.5
Tj = 25 C
2
PHP3N50
150 C
1.5
1
0.5
0
01234567
ID, Drain current (A)
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
8
a
2
Normalised RDS(ON) = f(Tj)
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1.7 A; VGS = 10 V
Product specification
PHP3N50E, PHB3N50E
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
1000 Junction capacitances (pF)
100
10
Ciss
PHP3N50
Coss
Crss
1
1 10 100
VDS, Drain-Source voltage (Volts)
1000
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 1998
5
Rev 1.200
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet PHP3N50E.PDF ] |
Número de pieza | Descripción | Fabricantes |
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