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PDF PHT4NQ10T Data sheet ( Hoja de datos )
| Número de pieza | PHT4NQ10T | |
| Descripción | N-channel enhancement mode field-effect transistor | |
| Fabricantes | NXP Semiconductors | |
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PHT4NQ10T
N-channel enhancement mode field-effect transistor
Rev. 01 — 31 July 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHT4NQ10T in SOT223.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Surface mount package.
3. Applications
s Primary side switch in DC to DC converters
s High speed line driver
s Fast general purpose switch.
c
c
4. Pinning information
Table 1: Pinning - SOT223, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
4
3 source (g)
4 drain (d)
03ab45
1 23
SOT223
Symbol
d
g
03ab30
s
N-channel MOSFET
1. TrenchMOS is a trademark of Royal Philips Electronics.
1 page  
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Tj = 25 °C; Figure 10
Tj = 150 °C; Figure 10
Tj = −55 °C; Figure 10
IDSS drain-source leakage current VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 1.75 A
Tj = 25 °C; Figure 8 and 9
Tj = 150 °C; Figure 9
Dynamic characteristics
gfs forward transconductance VDS = 5 V; ID = 3.5 A;
Figure 12
Qg(tot)
total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr turn-off rise time
td(off)
turn-off delay time
tf turn-off fall time
Source-drain diode
ID = 3.5 A; VDS = 80 V;
VGS = 10 V; Figure 15
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 13
VDD = 50 V; RD = 15 Ω;
VGS = 10 V; RG = 6 Ω
VSD source-drain (diode forward) IS = 3.5 A; VGS = 0 V;
voltage
Figure 14
trr
reverse recovery time
IS = 3.5 A;
Qr recovered charge
dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 30 V
Min
100
89
2
1.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ Max Unit
130 −
−−
34
−−
−6
1 25
4 250
10 100
200 250
− 575
4.2 −
7.4 −
1.5 −
3.3 −
300 −
44 −
21 −
8−
13 −
20 −
11 −
0.87 1.5
50 −
100 −
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
9397 750 07337
Product specification
Rev. 01 — 31 July 2000
© Philips Electronics N.V. 2000. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
11. Data sheet status
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Datasheet status
Objective specification
Product status
Development
Preliminary specification Qualification
Product specification
Production
Definition [1]
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
9397 750 07337
Product specification
Rev. 01 — 31 July 2000
© Philips Electronics N.V. 2000 All rights reserved.
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