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부품번호 | PHT6N06LT 기능 |
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기능 | TrenchMOS transistor Logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 9 페이지수
Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
PHT6N06LT
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mounting.
The device features very low
on-state resistance and has
integral zener diodes giving
ESD protection. It is intended for
use in DC-DC converters and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC) Tsp = 25 ˚C
Drain current (DC) Tamb = 25 ˚C
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 5 V
MAX.
55
5.5
2.5
8.3
150
150
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
PIN CONFIGURATION
4
123
SYMBOL
d
g
s
UNIT
V
A
A
W
˚C
mΩ
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 100 ˚C
Tamb = 100 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
55
55
±13
5.5
2.5
3.8
1.75
22
10
8.3
1.8
150
UNIT
V
V
V
A
A
A
A
A
A
W
W
˚C
MIN.
-
MAX.
2
UNIT
kV
January 1998
1
Rev 1.100
Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
PHT6N06LT
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tsp)
ID%
120
110
100
90
Normalised Current Derating
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tsp); conditions: VGS ≥ 5 V
100
ID/A
BUKX8150-55
RDS(ON) = VDS/ID
10
DC
1
tp =
1 us
10 us
100 us
1 ms
10 ms
100 ms
0.1 1
10
VDS/V
55
Fig.3. Safe operating area. Tsp = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth / (K/W)
1E+02
BUKX8150-55
3E+01
1E+01
3E+00
1E+00
3E-01
1E-01
3E-02
0.5
0.2
0.1
0.05
0.02
0
PD
tp
D
=
tp
T
Tt
1E-02
1E-07
1E-05
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-sp = f(t); parameter D = tp/T
Drain current, ID (A)
10 10
4
3.8
85
6
VGS = 3.6 V
3.4
3.2
4 3.0
2.8
2 2.6
2.2 2.4
0
0 2 4 6 8 10
Drain-source voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
400 RDS(ON)mOhm
350
3
300
3.2
250 3.4
200 3.6
150 4
5
100
50
1 2 3 4 5 ID/A6 7 8 9 10 11
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
January 1998
4
Rev 1.100
4페이지 Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
PRINTED CIRCUIT BOARD
36
60
4.6
9
10
18
4.5
Product specification
PHT6N06LT
Dimensions in mm.
7
15
50
Fig.17. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
January 1998
7
Rev 1.100
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
PHT6N06LT | TrenchMOS transistor Logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |