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PHW45NQ10T 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PHW45NQ10T은 전자 산업 및 응용 분야에서
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부품번호 PHW45NQ10T 기능
기능 N-channel TrenchMOS transistor
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PHW45NQ10T 데이터시트, 핀배열, 회로
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHB45NQ10T, PHP45NQ10T
PHW45NQ10T
FEATURES
’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 47 A
RDS(ON) 25 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package.
The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
SOT78 (TO220AB) SOT404 (D2PAK)
SOT429 (TO247)
PIN DESCRIPTION
1 gate
tab
tab
2 drain1
3 source
tab drain
1 23
2
13
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
47
33
188
150
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin 2 of the SOT404 package.
August 1999
1
Rev 1.000




PHW45NQ10T pdf, 반도체, 판매, 대치품
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHB45NQ10T, PHP45NQ10T
PHW45NQ10T
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100PD/PD 25 ˚C = f(Tmb)
175
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125
Mounting Base temperature, Tmb (C)
150
175
Fig.2. Normalised continuous drain current.
ID% = 100ID/ID 25 ˚C = f(Tmb); VGS 10 V
1000 Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
100
10
D.C.
1
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.1
1
10 100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area
ID & IDM = f(VDS); IDM single pulse; parameter tp
1 Transient thermal impedance, Zth j-mb (K/W)
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse
P
D
D = tp/T
tp
0.001
1E-06
1E-05
T
1E-04 1E-03 1E-02
Pulse width, tp (s)
1E-01
1E+00
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
40 Drain Current, ID (A)
VGS = 10V
35
8V
30
6V
Tj = 25 C
25
20 5 V
15 4.8 V
10
5
0
0
4.6 V
4.4 V
4 V 4.2 V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.16
4.2 V
4.4 V 4.6 V
4.8 V
0.14 4 V
Tj = 25 C
0.12
0.1
5V
0.08
0.06
0.04
8 V 6V
0.02
VGS = 10V
0
0 2 4 6 8 10 12 14 16 18 20
Drain Current, ID (A)
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID)
August 1999
4
Rev 1.000

4페이지










PHW45NQ10T 전자부품, 판매, 대치품
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHB45NQ10T, PHP45NQ10T
PHW45NQ10T
MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78
D1
D
E
P
q
L2(1)
b1
L
L1
123
ee
b
A
A1
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 c
D D1 E
eL
mm
4.5 1.39 0.9
4.1 1.27 0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
SOT78
TO-220
L1
3.30
2.79
L2(1)
max.
3.0
Pq Q
3.8 3.0 2.6
3.6 2.7 2.2
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
August 1999
7
Rev 1.000

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부품번호상세설명 및 기능제조사
PHW45NQ10T

N-channel TrenchMOS transistor

NXP Semiconductors
NXP Semiconductors

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