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PHW80NQ10T 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PHW80NQ10T은 전자 산업 및 응용 분야에서
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부품번호 PHW80NQ10T 기능
기능 N-channel TrenchMOS transistor
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PHW80NQ10T 데이터시트, 핀배열, 회로
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHW80NQ10T
FEATURES
’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 80 A
RDS(ON) 15 m
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope using ’trench
technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHW80NQ10T is supplied in
the SOT429 (TO247) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
80
57
320
263
175
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 74 A;
energy
tp = 100 µs; Tj prior to avalanche = 25˚C;
VDD 50 V; RGS = 50 ; VGS = 10 V; refer
to fig:15
IAS Non-repetitive avalanche
current
MIN.
-
MAX.
481
UNIT
mJ
- 80 A
August 1999
1
Rev 1.000




PHW80NQ10T pdf, 반도체, 판매, 대치품
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHW80NQ10T
Drain current, ID (A)
80
VDS > ID X RDS(ON)
70
60
50
40
30 175 C
20
Tj = 25 C
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
Transconductance, gfs (S)
80
70
Tj = 25 C
60
50
VDS > ID X RDS(ON)
175 C
40
30
20
10
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Drain current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
Threshold Voltage, VGS(TO) (V)
4.5
4 maximum
3.5
3 typical
2.5
2 minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1.0E-01 Drain current, ID (A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); Tj = 25 ˚C
5
Capacitances, Ciss, Coss, Crss (pF)
10000
Ciss
1000
Coss
Crss
100
0.1
1 10
Drain-Source Voltage, VDS (V)
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1999
4
Rev 1.000

4페이지










PHW80NQ10T 전자부품, 판매, 대치품
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHW80NQ10T
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1999
7
Rev 1.000

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부품번호상세설명 및 기능제조사
PHW80NQ10T

N-channel TrenchMOS transistor

NXP Semiconductors
NXP Semiconductors

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