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PDF PHW9N60E Data sheet ( Hoja de datos )
| Número de pieza | PHW9N60E | |
| Descripción | PowerMOS transistors Avalanche energy rated | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHB9N60E, PHW9N60E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 600 V
ID = 8.7 A
RDS(ON) ≤ 0.8 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHW9N60E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB9N60E is supplied in the SOT404 surface mounting package.
PINNING
SOT404
SOT429 (TO247)
PIN DESCRIPTION
tab
1 gate
2 drain1
3 source
tab drain
2
13
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
± 30
9
5.7
36
156
150
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin 2 of the SOT404 package.
December 1998
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Drain current, ID (A)
20
18 VDS > ID X RDS(ON)
16
14
PHP10N60E
Tj = 25 C
150 C
12
10
8
6
4
2
0
01234567
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
Transconductance, gfs (S)
12
VDS > ID X RDS(ON)
10
8
PHP10N60E
Tj = 25 C
150 C
6
4
2
0
0 5 10 15
Drain current, ID (A)
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
20
a Normalised RDS(ON) = f(Tj)
2
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V
Product specification
PHB9N60E, PHW9N60E
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Capacitances, Ciss, Coss, Crss (pF)
10000
PHP10N60E
1000
100
Ciss
Coss
Crss
10
0.1
1 10
Drain-source voltage, VDS (V)
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 1998
5
Rev 1.000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PHW9N60E.PDF ] | |
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