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PDF PHX14NQ20T Data sheet ( Hoja de datos )
| Número de pieza | PHX14NQ20T | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX14NQ20T , PHF14NQ20T
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 7.6 A
RDS(ON) ≤ 230 mΩ
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN DESCRIPTION
1 gate
case
case
2 drain
3 source
case isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
7.6
4.8
30
30
150
UNIT
V
V
V
A
A
A
W
˚C
November 2000
1
Rev 1.100
1 page  
Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX14NQ20T , PHF14NQ20T
Drain current, ID (A)
28
24
20
16
12 150 C
Tj = 25 C
8
4
0
0 2 4 6 8 10
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Transconductance, gfs (S)
20
15
10
5
0
0 4 8 12 16 20 24 28
ID / (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
a
2.5
Rds(on) normalised to 25 deg C
2
1.5
1
0.5
-70 -20 30 80 130
Ths / deg C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 7 A; VGS = 10 V
5 VGS(TO) / V
4.5 max
4
3.5 typ
3
2.5 min
2
1.5
1
0.5
0
-100
-50
0 Tj / C 50
100 150
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2% typ
98%
1E-04
1E-05
1E-06
01234
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
5
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
100
Ciss
Coss
Crss
10
0
10 20 30
Drain-Source Voltage, VDS (V)
40
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
November 2000
5
Rev 1.100
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PHX14NQ20T.PDF ] | |
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