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PDF PHX23NQ10T Data sheet ( Hoja de datos )
| Número de pieza | PHX23NQ10T | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHX23NQ10T
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 13 A
RDS(ON) ≤ 70 mΩ
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies
The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
PIN DESCRIPTION
1 gate
case
2 drain
3 source
case
isolated
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
13
8
52
27
150
UNIT
V
V
V
A
A
A
W
˚C
September 1999
1
Rev 1.000
1 page  
Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHX23NQ10T
50 ID / A
40
30
20
10
0
02
Tj / C = 25
150
46
VGS / V
8 10
Fig.7. Typical transfer characteristics.
ID = f(VGS)
Transconductance, gfs (S)
20
18
Tj = 25 C
16
14
12
10 150 C
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Drain current, ID / (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
2.4 Normalised On-state Resistance.
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction temperature , Tj (C)
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
Threshold Voltage, VGS(TO) (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1.0E-01 Drain current, ID (A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
Ciss
Coss
100
Crss
10
0.1
1 10
Drain-Source Voltage, VDS (V)
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
September 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PHX23NQ10T.PDF ] | |
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