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PDF PHX3055E Data sheet ( Hoja de datos )
| Número de pieza | PHX3055E | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHX3055E
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Isolated mounting tab
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 55 V
ID = 9 A
RDS(ON) ≤ 150 mΩ (VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode,
field-effect power transistor in a
plastic envelope with an electrically
isolated mounting tab. The device
uses ’trench’ technology to achieve
low on-state resistance.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHX3055E is supplied in the
SOT186A (isolated TO220AB)
conventional leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab isolated
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
± 20
9
5.6
36
21
150
UNIT
V
V
V
A
A
A
W
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
August 1999
1
Rev 1.000
1 page  
Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHX3055E
Drain current, ID (A)
10
9 VDS > ID X RDS(ON)
8
7
6
5
4
3
175 C
2
1 Tj = 25 C
0
01234567
Gate-source voltage, VGS (V)
8
9
Fig.7. Typical transfer characteristics.
ID = f(VGS)
10
Transconductance, gfs (S)
4
VDS > ID X RDS(ON)
3.5
3
Tj = 25 C
2.5
175 C
2
1.5
1
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Drain current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Normalised On-state Resistance
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
Threshold Voltage, VGS(TO) (V)
4.5
4 maximum
3.5
3 typical
2.5
2 minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1.0E-01 Drain current, ID (A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Capacitances, Ciss, Coss, Crss (pF)
1000
Ciss
100
Coss
Crss
10
0.1
1 10
Drain-Source Voltage, VDS (V)
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PHX3055E.PDF ] | |
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