PHX3055L Datasheet PDF - NXP Semiconductors
| Part Number | PHX3055L | |
| Description | PowerMOS transistor Logic level FET | |
| Manufacturers | NXP Semiconductors | |
| Logo |  |
|
|
There is a preview and PHX3055L download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
Preview 1 page No Preview Available !
Philips Semiconductors
PowerMOS transistor
Logic level FET
Preliminary specification
PHX3055L
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic full-pack envelope. The
device features high avalanche
energy capability, stable blocking
voltage, fast switching and high
thermal cycling performance with low
thermal resistance. Intended for use
in Switched Mode Power Supplies
(SMPS), motor control circuits and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
60
9.4
28
0.18
UNIT
V
A
W
Ω
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
ID Continuous drain current
IDM
PD
∆PD/∆Ths
VGS
VGSM
EAS
IAS
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Non-repetitive gate source
voltage
Single pulse avalanche
energy
Peak avalanche current
Tj, Tstg
Operating junction and
storage temperature range
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
Ths > 25 ˚C
tp≤50µs
VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;
VGS = 10 V
VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;
VGS = 10 V
MIN.
-
-
-
-
-
-
-
-
-
- 55
MAX.
9.4
5.9
26
28
0.22
± 15
± 20
25
6
150
UNIT
A
A
A
W
W/K
V
V
mJ
A
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
October 1997
1
Rev 1.000
|
| |
 
Philips Semiconductors
PowerMOS transistor
Logic level FET
Preliminary specification
PHX3055L
VGS, Gate-Source voltage (Volts)
15
ID = 10 A
Tj = 25 C
VDS = 30 V
10
PHP3055E
48 V
5
0
0 5 10 15
Qg, Gate charge (nC)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
Switching times (ns)
1000
VDD = 30 V
VGS = 10 V
RD = 2.7 Ohms
ID = 10 A
100 Tj = 25 C
tr
td(off)
tf
10
td(on)
PHP3055E
1
0 20 40 60 80
RG, Gate resistance (Ohms)
Fig.14. Typical switching times.
td(on), tr, td(off), tf = f(RG)
100
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50 0 50 100
Tj, Junction temperature (C)
150
Fig.15. Normalised drain-source breakdown voltage.
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
IF, Source-drain diode current (Amps)
20
VGS = 0 V
PHP3055E
15
Tj = 175 C
Tj = 25 C
10
5
0
0 0.5 1
VSDS, Source-drain voltage (Volts)
1.5
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
EAS, Normalised unclamped inductive energy (%)
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Starting Tj ( C)
Fig.17. Normalised unclamped inductive energy.
EAS% = f(Tj)
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.18. Unclamped inductive test circuit.
EAS = 0.5 ⋅ LID2 ⋅ V(BR)DSS/(V(BR)DSS − VDD)
October 1997
5
Rev 1.000
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PHX3055L electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ PHX3055L.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| PHX3055E | The function is N-channel TrenchMOS transistor. NXP Semiconductors | |
| PHX3055L | The function is PowerMOS transistor Logic level FET. NXP Semiconductors | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
PHX3
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||