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Datasheet PHX3N40E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PHX3N40E | PowerMOS transistors Avalanche energy rated Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package
PHX3N40E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 400 V
|  NXP Semiconductors | transistor |
PHX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PHX10N40E | PowerMOS transistors Avalanche energy rated Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package
PHX10N40E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 400 V NXP Semiconductors transistor | | |
| 2 | PHX14NQ20T | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PHX14NQ20T , PHF14NQ20T
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 7.6 A
g
RDS(ON) ≤ 230 mΩ
s
GENERAL DESCRIPTION
N-chan NXP Semiconductors transistor | | |
| 3 | PHX15N06E | PowerMOS transistor Isolated version of PHP20N06E Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of PHP20N06E
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding NXP Semiconductors transistor | | |
| 4 | PHX18NQ11T | N-channel TrenchMOS standard level FET PHX18NQ11T
N-channel TrenchMOS™ standard level FET
M3D308
Rev. 01 — 13 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.
1.2 Features NXP Semiconductors data | | |
| 5 | PHX18NQ20T | N-channel enhancement mode field-effect transistor PHX18NQ20T
N-channel enhancement mode field-effect transistor
Rev. 01 — 28 August 2000
M3D308
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHX18NQ20T in SOT186A.
2. Features
NXP Semiconductors transistor | | |
| 6 | PHX1N40 | PowerMOS transistor Philips Semiconductors
Product specification
PowerMOS transistor
PHX1N40
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a full pack plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycl NXP Semiconductors transistor | | |
| 7 | PHX1N40E | PowerMOS transistor Isolated version of PHP2N40E Philips Semiconductors
Objective specification
PowerMOS transistor Isolated version of PHP2N40E
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high NXP Semiconductors transistor | |
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