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부품번호 | PHX3N50E 기능 |
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기능 | PowerMOS transistors Avalanche energy rated | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHX3N50E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Isolated package
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 2.1 A
RDS(ON) ≤ 3 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHX3N50E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
2.1
1.3
14
30
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 2.1 A;
tp = 0.31 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1 IAR = 3.4 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
212
5.5
3.4
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
December 1998
1
Rev 1.200
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Ths)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V
100 ID, Drain current (Amps)
10 RDS(ON) = VDS/ID
1
DC
0.1
PHX2N50
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.01
1
10 100 1000
VDS, Drain-source voltage (Volts)
10000
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Product specification
PHX3N50E
10 Zth(j-hs) K/W
D = 0.5
1 0.2
0.1
0.05
0.02
0.1
0.01
PHX1N60
PD tp
D = tp
T
0.001
1us
10us
100us
T
1ms 10ms 100ms
tp / sec
t
1s
10s
Fig.4. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
8 ID, Drain current (Amps)
Tj = 25 C
7
6
5
4
PHP3N50
7 V 10 V
6V
5.5 V
3 5V
2 VGS = 4.5 V
1
0
0 5 10 15 20 25 30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics.
ID = f(VDS); parameter VGS
6 RDS(on), Drain-Source on resistance (Ohms)
PHP3N50
4.5 V
5 V 5.5 V
VGS = 6 V
10 V
5 7V
Tj = 25 C
4
3
2
1
0
01234567
ID, Drain current (Amps)
Fig.6. Typical on-state resistance.
RDS(ON) = f(ID); parameter VGS
8
December 1998
4
Rev 1.200
4페이지 Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Recesses (2x)
2.5
0.8 max. depth
10.3
max
3.2
3.0
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54 0.5
2.5
Product specification
PHX3N50E
1.0 (2x)
0.9
0.7
1.3
Fig.19. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
December 1998
7
Rev 1.200
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
PHX3N50E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |