PDF PHX4N40E Data sheet ( Hoja de datos )

Número de pieza	PHX4N40E
Descripción	PowerMOS transistors Avalanche energy rated
Fabricantes	NXP Semiconductors
Logotipo
Hay una vista previa y un enlace de descarga de PHX4N40E (archivo pdf) en la parte inferior de esta página. Total 8 Páginas
No Preview Available ! Philips Semiconductors PowerMOS transistors Avalanche energy rated Product specification PHX4N40E FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package SYMBOL g d s QUICK REFERENCE DATA VDSS = 400 V ID = 2.7 A RDS(ON) ≤ 1.8 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX4N40E is supplied in the SOT186A full pack isolated package. PINNING PIN DESCRIPTION 1 gate 2 drain 3 source case isolated SOT186A case 12 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Ths = 25 ˚C; VGS = 10 V Ths = 100 ˚C; VGS = 10 V Ths = 25 ˚C Ths = 25 ˚C MIN. - - - - - - - - 55 MAX. 400 400 ± 30 2.7 1.7 18 30 150 UNIT V V V A A A W ˚C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS EAS EAR IAS, IAR Non-repetitive avalanche energy Unclamped inductive load, IAS = 2.7 A; tp = 0.28 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 4.4 A; tp = 2.5 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current MIN. - - - MAX. 195 5.7 4.4 UNIT mJ mJ A 1 pulse width and repetition rate limited by Tj max. December 1998 1 Rev 1.200 1 page Philips Semiconductors PowerMOS transistors Avalanche energy rated 10 ID, Drain current (Amps) VDS > ID x RDS(on)max 8 6 4 PHP4N40 Tj = 25 C Tj = 150 C 2 0 02468 VGS, Gate-Source voltage (Volts) Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj 10 gfs, Transconductance (S) 4 VDS > ID x RDS(on)max 3 2 PHP4N40 Tj = 25 C 150 C 1 0 0 2 4 6 8 10 ID, Drain current (A) Fig.8. Typical transconductance. gfs = f(ID); parameter Tj a 2 Normalised RDS(ON) = f(Tj) 1 0 -60 -40 -20 0 20 40 60 80 100 120 140 Tj / C Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 2.2 A; VGS = 10 V Product specification PHX4N40E VGS(TO) / V 4 3 2 max. typ. min. 1 0 -60 -40 -20 0 20 40 60 80 100 120 140 Tj / C Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS 1E-01 ID / A SUB-THRESHOLD CONDUCTION 1E-02 1E-03 2 % typ 98 % 1E-04 1E-05 1E-06 01234 VGS / V Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS 1000 Junction capacitances (pF) 100 10 Ciss PHP4N40 Coss Crss 1 1 10 100 VDS, Drain-Source voltage (Volts) 1000 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz December 1998 5 Rev 1.200 5 Page

Páginas	Total 8 Páginas
PDF Descargar	[ Datasheet PHX4N40E.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
PHX4N40E	PowerMOS transistors Avalanche energy rated	NXP Semiconductors

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar