PDF PHX7N60E Data sheet ( Hoja de datos )

Número de pieza	PHX7N60E
Descripción	PowerMOS transistors Avalanche energy rated
Fabricantes	NXP Semiconductors
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No Preview Available ! Philips Semiconductors PowerMOS transistors Avalanche energy rated Product specification PHX7N60E FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package SYMBOL g d s QUICK REFERENCE DATA VDSS = 600 V ID = 3.6 A RDS(ON) ≤ 1.2 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX7N60E is supplied in the SOT186A full pack, isolated package. PINNING PIN DESCRIPTION 1 gate 2 drain 3 source case isolated SOT186A case 12 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Ths = 25 ˚C; VGS = 10 V Ths = 100 ˚C; VGS = 10 V Ths = 25 ˚C Ths = 25 ˚C MIN. - - - - - - - - 55 MAX. 600 600 ± 30 3.6 2.3 28 37 150 UNIT V V V A A A W ˚C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS EAS EAR IAS, IAR Non-repetitive avalanche energy Unclamped inductive load, IAS = 6.5 A; tp = 0.23 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 7 A; tp = 2.5 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current MIN. - - - MAX. 583 13 7 UNIT mJ mJ A 1 pulse width and repetition rate limited by Tj max. December 1998 1 Rev 1.400 1 page Philips Semiconductors PowerMOS transistors Avalanche energy rated 20 ID, Drain current (Amps) VDS > ID x RDS(on)max PHP6N60 Tj = 25 C 15 Tj = 150 C 10 5 0 02468 VGS, Gate-Source voltage (Volts) Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj 10 gfs, Transconductance (S) 10 VDS > ID x RDS(ON)max 8 6 PHP6N60 Tj = 25 C 150 C 4 2 0 0 5 10 15 ID, Drain current (A) Fig.8. Typical transconductance. gfs = f(ID); parameter Tj 20 a Normalised RDS(ON) = f(Tj) 2 1 0 -60 -40 -20 0 20 40 60 80 100 120 140 Tj / C Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3.5 A; VGS = 10 V Product specification PHX7N60E VGS(TO) / V 4 3 2 max. typ. min. 1 0 -60 -40 -20 0 20 40 60 80 100 120 140 Tj / C Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS 1E-01 ID / A SUB-THRESHOLD CONDUCTION 1E-02 1E-03 2 % typ 98 % 1E-04 1E-05 1E-06 01234 VGS / V Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS 10000 Junction capacitances (pF) PHP6N60 1000 Ciss 100 Coss Crss 10 1 10 100 VDS, Drain-Source voltage (Volts) 1000 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz December 1998 5 Rev 1.400 5 Page

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