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PDF MGFK39V4045 Data sheet ( Hoja de datos )
| Número de pieza | MGFK39V4045 | |
| Descripción | 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFK39V4045
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFK39V4045 is an internally impedance matched
GaAs power FET especially designed for use in 14.0~14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally impedance matched
High output power
P1dB=8W (TYP.) @f=14.0~14.5GHz
High linear power gain
GLP=5.5dB (TYP.) @f=14.0~14.5GHz
High power added efficiency
ηadd =20%(TYP.) @f=14.0~14.5GHz, P1dB
APPLICATION
For use in 14.0~14.5GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=2.4A
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
VGDO
Gate to drain voltage
-15
VGSO
Gate to source voltage
-15
ID Drain current
6.0
IGR Reverse gate current
IGF Forward gate current
-18
36
PT
Total power dissipation
*1
42.8
Tch Channel temperature
175
Tstg Storage temperature
*1 : Tc=25˚C
-65 ~ +175
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Unit
V
V
A
mA
mA
W
˚C
˚C
Symbol
Parameter
Test conditions
IDSS Saturated drain current
gm Transconductance
VGS (off)
P1dB
Gate to source cut-off voltage
Output power at 1dB gain
compression
GLP Linear power gain
ηadd
Power added efficiency
Rth (ch-c) Thermal resistance
*1
*1 : Channel to case
VDS=3V, VDS=0V
VDS=3V, ID=2.4A
VDS=3V, ID=20mA
VDS=10V, ID=2.4A, f=14.0~14.5GHz
∆Vf method
MITSUBISHI
ELECTRIC
Limits
Min. Typ.
— 4.0
1.2 2.0
-2 —
Max
6.0
—
-5
Unit
A
S
V
38.5 39.0 — dBm
4.5 5.5 —
dB
— 20 — %
— — 3.5 ˚C/W
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MGFK39V4045.PDF ] | |
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