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Número de pieza MGP20N14CL
Descripción SMARTDISCRETES Internally Clamped / N-Channel IGBT
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No Preview Available ! MGP20N14CL Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Preview
SMARTDISCRETES
Internally Clamped, N-Channel
IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETESmonolithic circuitry for
usage as an Ignition Coil Driver.
Temperature Compensated Gate–Collector Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
Low Saturation Voltage
High Pulsed Current Capability
Order this document
by MGP20N14CL/D
MGP20N14CL
20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
VCE(on) = 1.9 VOLTS
135 VOLTS (CLAMPED)
C
G
G
C
E
CASE 221A–09
STYLE 9
E TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
"Collector Current — Continuous
Collector Current — Single Pulsed (tp = 10 ms)
Total Power Dissipation (TO–220)
Derate Above 25°C
VCES
VCGR
VGE
IC
ICM
PD
CLAMPED
CLAMPED
CLAMPED
20
60
150
1.0
Operating and Storage Temperature Range
Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C
(VCC = 80 V, VGE = 5 V, Peak IL = 10 A, L = 10 mH)
TJ, Tstg
EAS
– 55 to 175
500
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
RqJC
RqJA
1.0
62.5
TL 260
10 lbfin (1.13 Nm)
SMARTDISCRETES is a trademark of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
REV 2
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
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