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Número de pieza | MGRB2018 | |
Descripción | Power Manager Gallium Arsenide Power Rectifier | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MGRB2018 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGRB2018CT/D
APdovwaencreMInafonramgaetiro™n
Gallium Arsenide Power Rectifier
MGRB2018CT
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity
protection diodes, these state-of-the-art devices have the following features:
• Planar Epitaxial Construction
• Nitride Passivation for Stable Blocking Characteristics
• Monolithic Dual Die Construction – May be Paralleled for High Current Output
(10A per leg or 20A per package)
• Single Die Available (MGRB1018)
• Epoxy Meets UL94, VO @ 1/8″
• Hyperfast and Soft Reverse Recovery Over Specified Temperature Range (15 ns)
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant & Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Available in 24mm Tape and Reel, 800 units/reel by adding a T4 suffix to the part number
• Marking: MGRB2018CT
MAXIMUM RATINGS
GALLIUM ARSENIDE
RECTIFIER
20 AMPERES
180 VOLTS
1
2, 4
3
2, 4
1
3
CASE 418B–02
D2PAK
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 90°C)
Per Leg
Per Package
DC Forward Current
(TC = 130°C)
Per Leg
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 100°C)
Per Leg
Non–Repetitive Peak Surge Current
Per Package
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
IDC
IFRM
IFSM
180
10
20
10
20
60
V
A
A
A
A
Operating Junction Temperature and Storage Temperature
THERMAL CHARACTERISTICS
Thermal Resistance – Junction to Case
Thermal Resistance – Junction to Ambient
ELECTRICAL CHARACTERISTICS
Per Leg
Per Leg
TJ, Tstg
RθJC
RθJA
– 55 to 175
3.1
53
°C
°C/W
Maximum Instantaneous Forward Voltage (1), see Figure 2
(IF = 10 A)
(IF = 5 A)
Per Leg
VF
TJ=25°C TJ=125°C
V
1.4 1.5
1.1 1.1
Maximum Instantaneous Reverse Current, see Figure 4
(VR = 180 V)
(VR = 90 V)
Per Leg
IR
TJ=25°C TJ=125°C
µA
25 685
1 120
Typical Reverse Recovery Time (2)
(VR = 150 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 150 V, IF = 10 A, di/dt = 200 A/µs)
Per Leg
trr
TJ=25°C TJ=125°C
ns
12.6 12.4
13 12.7
Typical Peak Reverse Recovery Current
(VR = 150 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 150 V, IF = 10 A, di/dt = 200 A/µs)
Per Leg
Note: This data sheet contains advance information only and is subject to change without notice.
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
(2) trr measured projecting from 25% of IRM to ground.
IRM TJ=25°C TJ=125°C A
1.5 1.6
1.6 1.7
Motorola RF Device Data
© Motorola, Inc. 1995
1
1 page PACKAGE DIMENSIONS
B
4
123
S
–T–
SEATING
PLANE
G
D 3 PL
0.13 (0.005) M T
C
E
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
K
J
H
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
14.60 15.88
1.14 1.40
CASE 418B–02
ISSUE B
Motorola RF Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MGRB2018.PDF ] |
Número de pieza | Descripción | Fabricantes |
MGRB2018 | Power Manager Gallium Arsenide Power Rectifier | Motorola Semiconductors |
MGRB2018CT | Power Manager Gallium Arsenide Power Rectifier | Motorola Semiconductors |
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