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PDF MGSF1N02LT3 Data sheet ( Hoja de datos )
| Número de pieza | MGSF1N02LT3 | |
| Descripción | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGSF1N02LT1/D
™
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
Part of the GreenLine™ Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry.
Typical applications are dc–dc converters and power manage-
ment in portable and battery–powered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
• Miniature SOT–23 Surface Mount Package Saves Board
Space
1
GATE
™
3 DRAIN
2 SOURCE
MGSF1N02LT1
Motorola Preferred Device
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
3
1
2
CASE 318–08, Style 21
SOT–23 (TO–236AB)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF1N02LT1
7″ 8mm embossed tape
3000
MGSF1N02LT3
13″ 8mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMotootorroollaa, SInmc. 1a9ll9–6Signal Transistors, FETs and Diodes Device Data
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
20
± 20
750
2000
225
– 55 to 150
625
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
1
1 page  
PACKAGE DIMENSIONS
MGSF1N02LT1
A
L
3
BS
12
VG
C
D H KJ
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.45 0.60
0.89 1.02
2.10 2.50
0.45 0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MGSF1N02LT3.PDF ] | |
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