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Número de pieza | MGSF1N02LT3 | |
Descripción | Power MOSFET 750 mAmps / 20 Volts | |
Fabricantes | ON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MGSF1N02LT3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! MGSF1N02LT1
Preferred Device
Power MOSFET
750 mAmps, 20 Volts
N–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc–dc converters and power management in portable
and battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
20
± 20
ID
IDM
PD
TJ, Tstg
750
2000
400
– 55 to
150
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
RθJA
TL
300
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
http://onsemi.com
750 mAMPS
20 VOLTS
RDS(on) = 90 mW
N–Channel
3
1
2
MARKING
DIAGRAM
3
SOT–23
CASE 318
1 STYLE 21
2
N2
W
W = Work Week
PIN ASSIGNMENT
Drain
3
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
12
Gate Source
ORDERING INFORMATION
Device
Package
Shipping
MGSF1N02LT1
MGSF1N02LT3
SOT–23
SOT–23
3000 Tape & Reel
10,000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MGSF1N02LT1/D
1 page MGSF1N02LT1
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
SOT–23 (TO–236)
CASE 318–08
ISSUE AF
KJ
NOTES:
ąă1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ąă2. CONTROLLING DIMENSION: INCH.
ąă3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
http://onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MGSF1N02LT3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MGSF1N02LT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET | Motorola Semiconductors |
MGSF1N02LT1 | Power MOSFET 750 mAmps / 20 Volts | ON |
MGSF1N02LT1G | Power MOSFET ( Transistor ) | ON Semiconductor |
MGSF1N02LT3 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET | Motorola Semiconductors |
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