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Datasheet MGSF1N03LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MGSF1N03LT1 | Power MOSFET, Transistor MGSF1N03LT1
Preferred Device
Power MOSFET
30 V, 2.1 A, Single N−Channel, SOT−23
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc co |  ON Semiconductor | mosfet |
| 2 | MGSF1N03LT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
Order this document by MGSF1N03LT1/D
MGSF1N03LT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature sur |  Motorola Semiconductors | mosfet |
MGS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MGS-70008 | Reflective SPDT GaAs MMIC Switch Reflective SPDT GaAs MMIC Switch Technical Data
MGS-70008
Features
• Single-Pole, Double-Throw Output • Broad Bandwidth: DC to 3␣ GHz • Low Insertion Loss: 0.8␣ dB␣ Typical at 1␣ GHz • Fast Switching Time: 3␣ ns␣ Typical • Ultra Low DC Power Consumption • Small Surface-Mount .gif){kind=small} Agilent(Hewlett-Packard) data | | |
| 2 | MGS-71008 | Absorptive SPDT GaAs MMIC Switch Absorptive SPDT GaAs MMIC Switch Technical Data
MGS-71008
Features
• Single-Pole, Double-Throw Output • Broad Bandwidth: DC to 3␣ GHz • High Isolation: 37␣ dB␣ Typical at 1␣ GHz • Fast Switching Time: 3␣ ns␣ Typical • Ultra Low DC Power Consumption • Small Surface-Mount Plas Agilent(Hewlett-Packard) data | | |
| 3 | MGS05N60D | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGS05N60D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient ope Motorola Semiconductors transistor | | |
| 4 | MGS05N60D | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGS05N60D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in effici  ON transistor | | |
| 5 | MGS1100 | Carbon Monoxide Gas Sensor Motorola Semiconductors sensor | | |
| 6 | MGS13002D | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGS13002D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient ope Motorola Semiconductors transistor | | |
| 7 | MGS13002D | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGS13002D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in effici ON transistor | |
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