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PDF MGV12N120D Data sheet ( Hoja de datos )
| Número de pieza | MGV12N120D | |
| Descripción | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MGV12N120D (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Preview Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage blocking capability. Short circuit rated IGBTs are
specifically suited for applications requiring a guaranteed short
circuit withstand time. Fast switching characteristics result in
efficient operations at high frequencies. Co–packaged IGBTs
save space, reduce assembly time and cost.
• High Power Surface Mount D3PAK Package
• High Speed Eoff: 160 mJ/A typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
C
Order this document
by MGV12N120D/D
MGV12N120D
IGBT & DIODE IN D3PAK
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
E
C
G
E
CASE 433–01, Style 1
TO–268AA
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
TJ, Tstg
tsc
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
(1) Pulse width is limited by maximum junction temperature.
TL
This document contains information on a new product. Specifications and information are subject to change without notice.
Value
1200
1200
±20
20
12
40
123
0.98
– 55 to 150
10
1.02
1.41
45
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
ms
°C/W
°C
© MMoototororloa,laIncIG. 1B99T5 Device Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MGV12N120D.PDF ] | |
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