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MGW12N120 데이터시트 PDF




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부품번호 MGW12N120 기능
기능 Insulated Gate Bipolar Transistor
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MGW12N120 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff: 160 mJ/A typical at 125°C
High Short Circuit Capability – 10 ms minimum
Robust High Voltage Termination
C
Order this document
by MGW12N120/D
MGW12N120
Motorola Preferred Device
IGBT IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
G
C
E
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
1200
1200
± 20
20
12
40
123
0.98
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 )
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TJ, Tstg
tsc
– 55 to 150
10
°C
ms
RθJC
RθJA
1.0
45
TL 260
10 lbfSin (1.13 NSm)
°C/W
°C
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1




MGW12N120 pdf, 반도체, 판매, 대치품
MGW12N120
3
VCC = 720 V
VGE = 15 V
TJ = 125°C
2.5
IC = 10 A
2
7.5 A
1.5
5A
1
10 20 30 40 50
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Switching Losses versus
Gate Resistance
2.4
VCC = 720 V
2.2 VGE = 15 V
RG = 20
2 TJ = 125°C
1.8
1.6
1.4
1.2
1
5 6 7 8 9 10
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
100
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
25
VCC = 720 V
VGE = 15 V
RG = 20
IC = 10 A
7.5 A
5A
50 75 100
TC, CASE TEMPERATURE (°C)
125
Figure 8. Total Switching Losses versus
Case Temperature
150
25
20
15 TJ = 125°C
10
TJ = 25°C
5
0
01 2 34
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
10
1
VGE = 15 V
RGE = 20
TJ 125°C
0.1
1 10
100 1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
10000
Figure 11. Reverse Biased
Safe Operating Area
4 Motorola TMOS Power MOSFET Transistor Device Data

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MGW12N120

Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor

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