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부품번호 | MGW12N120D 기능 |
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기능 | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed Eoff: 160 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
C
G
E
Order this document
by MGW12N120D/D
MGW12N120D
Motorola Preferred Device
IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
C
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
1200
1200
± 20
20
12
40
123
0.98
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
1.0 °C/W
1.4
45
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1
MGW12N120D
10000
1000
100
Cies
Coes
Cres
TJ = 25°C
10
0 5 10 15 20 25
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
16
12
Q1
8
QT
Q2
4
TJ = 25°C
IC = 20 A
0
0 20 40 60 80
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–to–Emitter and
Collector–to–Emitter Voltage versus Total Charge
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
25
VCC = 720 V
VGE = 15 V
RG = 20 Ω
50
IC = 10 A
7.5 A
5A
75 100
125
TC, CASE TEMPERATURE (°C)
Figure 8. Total Switching Losses versus
Case Temperature
150
1000
VGE = 0 V
Cies
100
Coes
Cres
TJ = 25°C
10
50 100 150 200
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5b. High Voltage Capacitance
Variation
3
VCC = 720 V
VGE = 15 V
2.5 TJ = 125°C
IC = 10 A
2
7.5 A
1.5
5A
1
10 20 30 40 50
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Switching Losses versus
Gate Resistance
2.4
VCC = 720 V
2.2 VGE = 15 V
RG = 20 Ω
2 TJ = 125°C
1.8
1.6
1.4
1.2
1
5 6 7 8 9 10
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
4 Motorola TMOS Power MOSFET Transistor Device Data
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MGW12N120 | Insulated Gate Bipolar Transistor | Motorola Semiconductors |
MGW12N120 | Insulated Gate Bipolar Transistor | ON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |