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Datasheet MGW20N120-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
MGW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MGW12N120 | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGW12N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl  Motorola Semiconductors transistor | | |
| 2 | MGW12N120 | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGW12N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl  ON transistor | | |
| 3 | MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGW12N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGW12N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–p Motorola Semiconductors transistor | | |
| 4 | MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGW12N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGW12N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–p ON transistor | | |
| 5 | MGW14N60ED | Insulated Gate Bipolar Transistor ON transistor | | |
| 6 | MGW20N120 | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGW20N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl Motorola Semiconductors transistor | | |
| 7 | MGW20N120 | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGW20N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl ON transistor | |
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