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PDF MGW21N60ED Data sheet ( Hoja de datos )
| Número de pieza | MGW21N60ED | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and rugged short circuit device.
• Industry Standard TO–247 Package
• High Speed: Eoff = 65 mJ/A typical at 125°C
• High Voltage Short Circuit Capability – 10 ms minimum at
125°C, 400 V
• Low On–Voltage — 2.1 V typical at 20 A, 125°C
• Soft Recovery Free Wheeling Diode is included in the Package
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
G
C
E
Order this document
by MGW21N60ED/D
MGW21N60ED
IGBT IN TO–247
21 A @ 90°C
31 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
ON–VOLTAGE
G
C
E
CASE 340K–01,
TO–247 AE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
600
± 20
31
21
42
142
1.14
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
tsc 10
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Diode
Thermal Resistance — Junction to Ambient
RθJC
RθJC
RθJA
0.88
1.4
45
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL 260
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
ms
°C/W
°C
© MMoototororloa,laIncIG. 1B99T7 Device Data
1
1 page  
1.6 VCC = 360 V
WVGE = 15 V
RG = 20
1.2
0.8
IC = 20 A
15 A
10 A
0.4
0
–50 –25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Turn–Off Losses versus
Junction Temperature
150
1.4
TJ = 125°C
1.2 VCC = 360 V
WVGE = 15 V
1.0 RG = 20
0.8
MGW21N60ED
0.6
0.4
0.2
0
0 5 10 15 20
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Turn–Off Losses versus
Collector Current
100 100
TJ = 125°C
10
25°C
1
0.5 1.0
1.5 2.0 2.5
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 13. Forward Characteristics
versus Current
10
WTJ = 125°C
RGE = 20
VGE = 15 V
1
1 10 100 1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 14. Reverse Biased Safe
Operating Area
Motorola IGBT Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MGW21N60ED.PDF ] | |
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