Datasheet.kr   

MGW30N60 데이터시트 PDF




Motorola Semiconductors에서 제조한 전자 부품 MGW30N60은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 MGW30N60 자료 제공

부품번호 MGW30N60 기능
기능 Insulated Gate Bipolar Transistor
제조업체 Motorola Semiconductors
로고 Motorola Semiconductors 로고


MGW30N60 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 6 페이지수

미리보기를 사용할 수 없습니다

MGW30N60 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff: 60 mJ per Amp typical at 125°C
High Short Circuit Capability – 10 ms minimum
Robust High Voltage Termination
Robust RBSOA
C
Order this document
by MGW30N60/D
MGW30N60
Motorola Preferred Device
IGBT IN TO–247
30 A @ 90°C
50 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
G
E
G
C
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
±20 Vdc
50 Adc
30
100 Apk
202 Watts
1.61 W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 )
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TJ, Tstg
tsc
– 55 to 150
10
°C
ms
RθJC
RθJA
0.62
45
TL 260
10 lbfSin (1.13 NSm)
°C/W
°C
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
1




MGW30N60 pdf, 반도체, 판매, 대치품
MGW30N60
3
VCC = 360 V
2.5 VGE = 15 V
TJ = 125°C
2
IC = 30 A
1.5 20 A
1
10 A
0.5
0
10 20 30 40
RG, GATE RESISTANCE (OHMS)
Figure 7. Turn–Off Losses versus
Gate Resistance
2
VCC = 360 V
VGE = 15 V
1.6 RG = 20
TJ = 125°C
1.2
50
0.8
0.4
0
0 5 10 15 20 25 30
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Turn–Off Losses versus
Collector–to–Emitter Current
3
VCC = 360 V
2.5 VGE = 15 V
RG = 20
2
1.5 IC = 30 A
1 20 A
0.5 10 A
0
0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Turn–Off Losses versus
Junction Temperature
100
150
10
1
VGE = 15 V
RGE = 20
TJ = 125°C
0.1
1
10
100
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 10. Reverse Biased Safe
Operating Area
1000
4 Motorola TMOS Power MOSFET Transistor Device Data

4페이지












구       성 총 6 페이지수
다운로드[ MGW30N60.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MGW30N60

Insulated Gate Bipolar Transistor

Motorola Semiconductors
Motorola Semiconductors

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵