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부품번호 | MGW30N60 기능 |
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기능 | Insulated Gate Bipolar Transistor | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed Eoff: 60 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Robust High Voltage Termination
• Robust RBSOA
C
Order this document
by MGW30N60/D
MGW30N60
Motorola Preferred Device
IGBT IN TO–247
30 A @ 90°C
50 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
G
E
G
C
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
±20 Vdc
50 Adc
30
100 Apk
202 Watts
1.61 W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TJ, Tstg
tsc
– 55 to 150
10
°C
ms
RθJC
RθJA
0.62
45
TL 260
10 lbfSin (1.13 NSm)
°C/W
°C
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
1
MGW30N60
3
VCC = 360 V
2.5 VGE = 15 V
TJ = 125°C
2
IC = 30 A
1.5 20 A
1
10 A
0.5
0
10 20 30 40
RG, GATE RESISTANCE (OHMS)
Figure 7. Turn–Off Losses versus
Gate Resistance
2
VCC = 360 V
VGE = 15 V
1.6 RG = 20 Ω
TJ = 125°C
1.2
50
0.8
0.4
0
0 5 10 15 20 25 30
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Turn–Off Losses versus
Collector–to–Emitter Current
3
VCC = 360 V
2.5 VGE = 15 V
RG = 20 Ω
2
1.5 IC = 30 A
1 20 A
0.5 10 A
0
0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Turn–Off Losses versus
Junction Temperature
100
150
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1
10
100
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 10. Reverse Biased Safe
Operating Area
1000
4 Motorola TMOS Power MOSFET Transistor Device Data
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당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MGW30N60 | Insulated Gate Bipolar Transistor | Motorola Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |