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PDF MGW30N60 Data sheet ( Hoja de datos )
| Número de pieza | MGW30N60 | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed Eoff: 60 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Robust High Voltage Termination
• Robust RBSOA
C
Order this document
by MGW30N60/D
MGW30N60
Motorola Preferred Device
IGBT IN TO–247
30 A @ 90°C
50 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
G
E
G
C
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
±20 Vdc
50 Adc
30
100 Apk
202 Watts
1.61 W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TJ, Tstg
tsc
– 55 to 150
10
°C
ms
RθJC
RθJA
0.62
45
TL 260
10 lbfSin (1.13 NSm)
°C/W
°C
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
1
1 page  
PACKAGE DIMENSIONS
MGW30N60
–Q–
0.25 (0.010) M T B M
–B–
A
R
KP
UL
1 23
–Y–
F
D
0.25 (0.010) M Y Q S
V
G
–T–
E
C
4
H
J
CASE 340F–03
TO–247AE
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX
A 20.40 20.90
B 15.44 15.95
C 4.70 5.21
D 1.09 1.30
E 1.50 1.63
F 1.80 2.18
G 5.45 BSC
H 2.56 2.87
J 0.48 0.68
K 15.57 16.08
L 7.26 7.50
P 3.10 3.38
Q 3.50 3.70
R 3.30 3.80
U 5.30 BSC
V 3.05 3.40
INCHES
MIN MAX
0.803 0.823
0.608 0.628
0.185 0.205
0.043 0.051
0.059 0.064
0.071 0.086
0.215 BSC
0.101 0.113
0.019 0.027
0.613 0.633
0.286 0.295
0.122 0.133
0.138 0.145
0.130 0.150
0.209 BSC
0.120 0.134
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Motorola TMOS Power MOSFET Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MGW30N60.PDF ] | |
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