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PDF MGY25N120 Data sheet ( Hoja de datos )
| Número de pieza | MGY25N120 | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time. Fast switching characteristics result in efficient
operation at high frequencies.
• Industry Standard High Power TO–264 Package (TO–3PBL)
• High Speed Eoff: 273 mJ/A typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Robust High Voltage Termination
C
Order this document
by MGY25N120/D
MGY25N120
Motorola Preferred Device
IGBT IN TO–264
25 A @ 90°C
38 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
C
GE
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
1200
1200
±20
38
25
76
212
1.69
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TJ, Tstg
tsc
– 55 to 150
10
°C
ms
RθJC
RθJA
0.6
35
TL 260
10 lbfSin (1.13 NSm)
°C/W
°C
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1
1 page  
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E–05
1.0E–04
MGY25N120
1.0E–03
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E–02
t, TIME (s)
1.0E–01
1.0E+00
1.0E+01
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MGY25N120.PDF ] | |
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