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PDF MGY25N120D Data sheet ( Hoja de datos )
| Número de pieza | MGY25N120D | |
| Descripción | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–264 Package (TO–3PBL)
• High Speed Eoff: 226 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
C
G
E
Order this document
by MGY25N120D/D
MGY25N120D
Motorola Preferred Device
IGBT & DIODE IN TO–264
25 A @ 90°C
38 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
C
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
1200
1200
±20
38
25
76
212
1.69
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
0.6 °C/W
0.9
35
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1
1 page  
50
40
30 TJ = 125°C
TJ = 25°C
20
10
0
01 2 345
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
MGY25N120D
100
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1
10
100
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Reverse Biased
Safe Operating Area
1000
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E–05
1.0E–04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
1.0E+00
1.0E+01
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MGY25N120D.PDF ] | |
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