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부품번호 | MGY25N120D 기능 |
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기능 | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | ||
제조업체 | ON | ||
로고 | |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGY25N120D/D
™Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage blocking capability. Short circuit rated IGBT’s are specifical-
ly suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–264 Package (TO–3PBL)
• High Speed Eoff: 216 mJ/A typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
C
MGY25N120D
Motorola Preferred Device
IGBT & DIODE IN TO–264
25 A @ 90°C
38 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
C
E
G
E
CASE 340G–02
STYLE 5
TO–264
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
1200
1200
±20
38
25
76
212
1.69
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
0.6 °C/W
0.9
35
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
© MMoototororloa,laIncIG. 1B99T7 Device Data
1
MGY25N120D
10000
1000
100
Cies
Coes
Cres
TJ = 25°C
VGE = 0 V
10
0 5 10 15 20 25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
6
5.5
5
4.5
4
3.5
3
2.5
2
10
IC = 25 A
15 A
VCC = 720 V
VGE = 15 V
TJ = 125°C
10 A
20 30 40
RG, GATE RESISTANCE (OHMS)
Figure 7. Turn–Off Losses versus
Gate Resistance
50
50
40
30 TJ = 125°C
25°C
20
10
0
01 2 345
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage Drop
16
QT
14
12
10 Q1
8
Q2
6
4
TJ = 25°C
IC = 25 A
2
0
0 10 20 30 40 50 60 70
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
7
VCC = 720 V
6 VGE = 15 V
RG = 20 Ω
5
4
IC = 25 A
3 15 A
2
10 A
1
0
25 50 75 100 125
TC, CASE TEMPERATURE (°C)
Figure 8. Turn–Off Losses versus
Case Temperature
150
100
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1 10
100 1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
10,000
Figure 10. Reverse Biased
Safe Operating Area
4 Motorola IGBT Device Data
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MGY25N120 | Insulated Gate Bipolar Transistor | Motorola Semiconductors |
MGY25N120 | Insulated Gate Bipolar Transistor | ON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |