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PDF MGY30N60D Data sheet ( Hoja de datos )
| Número de pieza | MGY30N60D | |
| Descripción | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–264 Package (TO–3PBL)
• High Speed Eoff: 60 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
C
G
E
Order this document
by MGY30N60D/D
MGY30N60D
Motorola Preferred Device
IGBT & DIODE IN TO–264
30 A @ 90°C
50 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
G
C
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
±20 Vdc
50 Adc
30
100 Apk
202 Watts
1.61 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω)
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
0.62 °C/W
1.41
35
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
1
1 page  
3
VCC = 360 V
VGE = 15 V
RG = 20 Ω
2
IC = 30 A
1 20 A
10 A
0
0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Turn–Off Losses versus
Junction Temperature
150
100
2
VCC = 360 V
VGE = 15 V
1.5 RG = 20 Ω
TJ = 125°C
1
MGY30N60D
0.5
0
0 5 10 15 20 25 30
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 12. Turn–Off Losses versus
Collector–to–Emitter Current
100
10
TJ = 125°C
TJ = 25°C
1
0.1
0 0.4 0.8 1.2 1.6
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 13. Typical Diode Forward Drop versus
Instantaneous Forward Current
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1
10
100
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 14. Reverse Biased Safe
Operating Area
1000
Motorola TMOS Power MOSFET Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MGY30N60D.PDF ] | |
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