PDF MGY40N60 Data sheet ( Hoja de datos )

Número de pieza	MGY40N60
Descripción	Insulated Gate Bipolar Transistor
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifi- cally suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. • Industry Standard High Power TO–264 Package (TO–3PBL) • High Speed Eoff: 60 mJ per Amp typical at 125°C • High Short Circuit Capability – 10 ms minimum • Robust High Voltage Termination • Robust RBSOA C Order this document by MGY40N60/D MGY40N60 Motorola Preferred Device IGBT IN TO–264 40 A @ 90°C 66 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED G C GE E CASE 340G–02, Style 5 TO–264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C VCES VCGR VGE IC25 IC90 ICM PD 600 Vdc 600 Vdc ±20 Vdc 66 Adc 40 132 Apk 260 Watts 2.08 W/°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw TJ, Tstg tsc – 55 to 150 10 °C ms RθJC RθJA 0.48 35 TL 260 10 lbfSin (1.13 NSm) °C/W °C (1) Pulse width is limited by maximum junction temperature. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. © MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data 1 1 page PACKAGE DIMENSIONS MGY40N60 –B– N R –Y– 123 0.25 (0.010) M T B M –Q– U –T– C E A L P K F 2 PL W G D 3 PL 0.25 (0.010) M Y Q S J H CASE 340G–02 TO–264 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.8 2.9 1.102 1.142 B 19.3 20.3 0.760 0.800 C 4.7 5.3 0.185 0.209 D 0.93 1.48 0.037 0.058 E 1.9 2.1 0.075 0.083 F 2.2 2.4 0.087 0.102 G 5.45 BSC 0.215 BSC H 2.6 3.0 0.102 0.118 J 0.43 0.78 0.017 0.031 K 17.6 18.8 0.693 0.740 L 11.0 11.4 0.433 0.449 N 3.95 4.75 0.156 0.187 P 2.2 2.6 0.087 0.102 Q 3.1 3.5 0.122 0.137 R 2.15 2.35 0.085 0.093 U 6.1 6.5 0.240 0.256 W 2.8 3.2 0.110 0.125 STYLE 5: PIN 1. 2. 3. GATE COLLECTOR EMITTER Motorola TMOS Power MOSFET Transistor Device Data 5 5 Page

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