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부품번호 MGY40N60D 기능
기능 Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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MGY40N60D 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
Industry Standard High Power TO–264 Package (TO–3PBL)
High Speed Eoff: 60 mJ per Amp typical at 125°C
High Short Circuit Capability – 10 ms minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
Robust RBSOA
C
G
E
Order this document
by MGY40N60D/D
MGY40N60D
Motorola Preferred Device
IGBT & DIODE IN TO–264
40 A @ 90°C
66 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
G
C
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
±20 Vdc
66 Adc
40
132 Apk
260 Watts
2.08 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 )
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Case – Diode
Thermal Resistance — Junction to Ambient
RθJC
RθJC
RθJA
0.48 °C/W
1.13
35
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
1




MGY40N60D pdf, 반도체, 판매, 대치품
MGY40N60D
12000
VCE = 0 V
8000 Cies
TJ = 25°C
4000
Coes
Cres
0
0 5 10 15 20 25
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
8.5
VCC = 360 V
7.5
VGE = 15 V
TJ = 125°C
6.5
IC = 40 A
5.5 30 A
4.5
3.5 20 A
2.5
10
20 30 40
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Switching Losses versus
Gate Resistance
50
7
VCC = 360 V
6 VGE = 15 V
RG = 20
5 TJ = 125°C
4
3
2
1
0
0 5 10 15 20 25 30 35 40
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
20
QT
15
10 Q1
Q2
5 TJ = 25°C
IC = 40 A
0
0 50 100 150 200 250
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
VCC = 360 V
7 VGE = 15 V
RG = 20
5
3
IC = 40 A
30 A
20 A
1
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Total Switching Losses versus
Junction Temperature
4
VCC = 360 V
VGE = 15 V
TJ = 125°C
3
2
1
IC = 40 A
30 A
20 A
0
10 20 30 40 50
RG, GATE RESISTANCE (OHMS)
Figure 10. Turn–Off Losses versus
Gate Resistance
4 Motorola TMOS Power MOSFET Transistor Device Data

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