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부품번호 | MGY40N60D 기능 |
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기능 | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–264 Package (TO–3PBL)
• High Speed Eoff: 60 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
C
G
E
Order this document
by MGY40N60D/D
MGY40N60D
Motorola Preferred Device
IGBT & DIODE IN TO–264
40 A @ 90°C
66 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
G
C
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
±20 Vdc
66 Adc
40
132 Apk
260 Watts
2.08 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω)
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Case – Diode
Thermal Resistance — Junction to Ambient
RθJC
RθJC
RθJA
0.48 °C/W
1.13
35
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
1
MGY40N60D
12000
VCE = 0 V
8000 Cies
TJ = 25°C
4000
Coes
Cres
0
0 5 10 15 20 25
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
8.5
VCC = 360 V
7.5
VGE = 15 V
TJ = 125°C
6.5
IC = 40 A
5.5 30 A
4.5
3.5 20 A
2.5
10
20 30 40
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Switching Losses versus
Gate Resistance
50
7
VCC = 360 V
6 VGE = 15 V
RG = 20 Ω
5 TJ = 125°C
4
3
2
1
0
0 5 10 15 20 25 30 35 40
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
20
QT
15
10 Q1
Q2
5 TJ = 25°C
IC = 40 A
0
0 50 100 150 200 250
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
VCC = 360 V
7 VGE = 15 V
RG = 20 Ω
5
3
IC = 40 A
30 A
20 A
1
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Total Switching Losses versus
Junction Temperature
4
VCC = 360 V
VGE = 15 V
TJ = 125°C
3
2
1
IC = 40 A
30 A
20 A
0
10 20 30 40 50
RG, GATE RESISTANCE (OHMS)
Figure 10. Turn–Off Losses versus
Gate Resistance
4 Motorola TMOS Power MOSFET Transistor Device Data
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MGY40N60 | Insulated Gate Bipolar Transistor | Motorola Semiconductors |
MGY40N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | Motorola Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |