|
|
|
부품번호 | MCR718T4 기능 |
|
|
기능 | Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) | ||
제조업체 | ON | ||
로고 | |||
전체 6 페이지수
MCR716, MCR718
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light
and speed control.
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Surface Mount Lead Form − Case 369C
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage
(Note 1) (TJ = −40 to 110°C, Sine
Wave, 50 to 60 Hz, Gate Open)
MCR716
MCR718
VDRM,
VRRM
400
600
V
On−State RMS Current
(180° Conduction Angles; TC = 90°C)
Average On−State Current
(180° Conduction Angles; TC = 90°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 110°C)
Circuit Fusing Consideration
(t = 8.3 msec)
IT(RMS)
IT(AV)
ITSM
I2t
4.0 A
2.6 A
25 A
2.6 A2sec
Forward Peak Gate Power
PGM 0.5 W
(Pulse Width ≤ 1.0 msec, TC = 90°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
PG(AV)
0.1
W
Forward Peak Gate Current
IGM 0.2 A
(Pulse Width ≤ 1.0 msec, TC = 90°C)
Operating Junction Temperature Range
TJ −40 to +110 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 4
1
http://onsemi.com
SCRs
4.0 AMPERES RMS
400 − 600 VOLTS
G
AK
12
3
4
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAM
YWW
MC
R71x
Y = Year
WW = Work Week
x = 6 or 8
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR716/D
MCR716, MCR718
35 1.0
30
25 0.5
20
15
−40 −20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
0
−40 −20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0 2.0
1.5 1.5
1.0 1.0
0.5
0
−40 −20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 7. Typical Holding Current versus
Junction Temperature
0.5
0
−40 −20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 8. Typical Latching Current versus
Junction Temperature
http://onsemi.com
4
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ MCR718T4.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MCR718T4 | Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) | ON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |