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MCR718T4 데이터시트 PDF




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부품번호 MCR718T4 기능
기능 Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
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MCR718T4 데이터시트, 핀배열, 회로
MCR716, MCR718
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light
and speed control.
Features
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Surface Mount Lead Form − Case 369C
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage
(Note 1) (TJ = −40 to 110°C, Sine
Wave, 50 to 60 Hz, Gate Open)
MCR716
MCR718
VDRM,
VRRM
400
600
V
On−State RMS Current
(180° Conduction Angles; TC = 90°C)
Average On−State Current
(180° Conduction Angles; TC = 90°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 110°C)
Circuit Fusing Consideration
(t = 8.3 msec)
IT(RMS)
IT(AV)
ITSM
I2t
4.0 A
2.6 A
25 A
2.6 A2sec
Forward Peak Gate Power
PGM 0.5 W
(Pulse Width 1.0 msec, TC = 90°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
PG(AV)
0.1
W
Forward Peak Gate Current
IGM 0.2 A
(Pulse Width 1.0 msec, TC = 90°C)
Operating Junction Temperature Range
TJ −40 to +110 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 4
1
http://onsemi.com
SCRs
4.0 AMPERES RMS
400 − 600 VOLTS
G
AK
12
3
4
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAM
YWW
MC
R71x
Y = Year
WW = Work Week
x = 6 or 8
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR716/D




MCR718T4 pdf, 반도체, 판매, 대치품
MCR716, MCR718
35 1.0
30
25 0.5
20
15
−40 −20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
0
−40 −20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0 2.0
1.5 1.5
1.0 1.0
0.5
0
−40 −20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 7. Typical Holding Current versus
Junction Temperature
0.5
0
−40 −20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 8. Typical Latching Current versus
Junction Temperature
http://onsemi.com
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부품번호상세설명 및 기능제조사
MCR718T4

Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)

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