Datasheet.kr   

MCR8DSN 데이터시트 PDF




Motorola Semiconductors에서 제조한 전자 부품 MCR8DSN은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MCR8DSN 자료 제공

부품번호 MCR8DSN 기능
기능 Silicon Controlled Rectifiers
제조업체 Motorola Semiconductors
로고 Motorola Semiconductors 로고


MCR8DSN 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 6 페이지수

미리보기를 사용할 수 없습니다

MCR8DSN 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR8DSM/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
MCR8DSM
MCR8DSN
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
G
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR8DSN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR8DSNT4
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR8DSN–1
A
K
SCRs
8.0 AMPERES RMS
600 thru 800 VOLTS
A
K
AG
CASE 369A–13
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
Peak Repetitive Reverse Voltage
W(TJ = –40 to 110°C, RGK = 1.0 K )
MCR8DSM
MCR8DSN
Symbol
VDRM
VRRM
Value
600
800
Unit
Volts
On–State RMS Current
(All Conduction Angles; TC = 90°C)
Average On–State Current (All Conduction Angles; TC = 90°C)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(RMS)
IT(AV)
ITSM
I2t
Amps
8.0
5.1
90
34 A2sec
Peak Gate Power
m(Pulse Width 10 sec, TC = 90°C)
Average Gate Power
(t = 8.3 msec, TC = 90°C)
mPeak Gate Current (Pulse Width 10 sec, TC = 90°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
5.0
0.5
2.0
–40 to 110
–40 to 150
Watts
Amps
°C
Characteristic
Symbol
Max Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (2)
RqJC
RqJA
RqJA
2.2 °C/W
88
80
Maximum Lead Temperature for Soldering Purposes (3)
TL 260 °C
W(1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 K ; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that
the voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1997
1




MCR8DSN pdf, 반도체, 판매, 대치품
MCR8DSM MCR8DSN
10
1.0
RGK = 1.0 KW
10
1.0
RGK = 1.0 KW
0.1
–40 –25 –10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 7. Typical Holding Current versus
Junction Temperature
0.1
–40 –25
–10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 8. Typical Latching Current versus
Junction Temperature
10
TJ = 25°C
8.0
6.0
IGT = 25 mA
4.0
m2.0 IGT = 10 A
0
100
1000
RGK, GATE–CATHODE RESISTANCE (OHMS)
Figure 9. Holding Current versus
Gate–Cathode Resistance
10 K
1000
400 V
100 600 V
VPK = 800 V
10
TJ = 110°C
1000
100 70°C
90°C
TJ = 110°C
10
1.0
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
Figure 10. Exponential Static dv/dt versus
Gate–Cathode Resistance and Junction
Temperature
1000
VD = 800 V
TJ = 110°C
m100 IGT = 25 A
IGT = 10 mA
10
1.0
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
Figure 11. Exponential Static dv/dt versus
Gate–Cathode Resistance and Peak Voltage
1.0
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
Figure 12. Exponential Static dv/dt versus
Gate–Cathode Resistance and Gate Trigger
Current Sensitivity
4 Motorola Thyristor Device Data

4페이지












구       성 총 6 페이지수
다운로드[ MCR8DSN.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MCR8DSM

Silicon Controlled Rectifiers

Motorola Semiconductors
Motorola Semiconductors
MCR8DSM

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵