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부품번호 | MCR8DSN 기능 |
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기능 | Silicon Controlled Rectifiers | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR8DSM/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
MCR8DSM
MCR8DSN
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
G
• To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR8DSN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR8DSNT4
• To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR8DSN–1
A
K
SCRs
8.0 AMPERES RMS
600 thru 800 VOLTS
A
K
AG
CASE 369A–13
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
Peak Repetitive Reverse Voltage
W(TJ = –40 to 110°C, RGK = 1.0 K )
MCR8DSM
MCR8DSN
Symbol
VDRM
VRRM
Value
600
800
Unit
Volts
On–State RMS Current
(All Conduction Angles; TC = 90°C)
Average On–State Current (All Conduction Angles; TC = 90°C)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(RMS)
IT(AV)
ITSM
I2t
Amps
8.0
5.1
90
34 A2sec
Peak Gate Power
m(Pulse Width ≤ 10 sec, TC = 90°C)
Average Gate Power
(t = 8.3 msec, TC = 90°C)
mPeak Gate Current (Pulse Width ≤ 10 sec, TC = 90°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
5.0
0.5
2.0
–40 to 110
–40 to 150
Watts
Amps
°C
Characteristic
Symbol
Max Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (2)
RqJC
RqJA
RqJA
2.2 °C/W
88
80
Maximum Lead Temperature for Soldering Purposes (3)
TL 260 °C
W(1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 K ; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that
the voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1997
1
MCR8DSM MCR8DSN
10
1.0
RGK = 1.0 KW
10
1.0
RGK = 1.0 KW
0.1
–40 –25 –10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 7. Typical Holding Current versus
Junction Temperature
0.1
–40 –25
–10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 8. Typical Latching Current versus
Junction Temperature
10
TJ = 25°C
8.0
6.0
IGT = 25 mA
4.0
m2.0 IGT = 10 A
0
100
1000
RGK, GATE–CATHODE RESISTANCE (OHMS)
Figure 9. Holding Current versus
Gate–Cathode Resistance
10 K
1000
400 V
100 600 V
VPK = 800 V
10
TJ = 110°C
1000
100 70°C
90°C
TJ = 110°C
10
1.0
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
Figure 10. Exponential Static dv/dt versus
Gate–Cathode Resistance and Junction
Temperature
1000
VD = 800 V
TJ = 110°C
m100 IGT = 25 A
IGT = 10 mA
10
1.0
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
Figure 11. Exponential Static dv/dt versus
Gate–Cathode Resistance and Peak Voltage
1.0
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
Figure 12. Exponential Static dv/dt versus
Gate–Cathode Resistance and Gate Trigger
Current Sensitivity
4 Motorola Thyristor Device Data
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부품번호 | 상세설명 및 기능 | 제조사 |
MCR8DSM | Silicon Controlled Rectifiers | Motorola Semiconductors |
MCR8DSM | Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |