DataSheet.es    


PDF MCR8S Data sheet ( Hoja de datos )

Número de pieza MCR8S
Descripción Silicon Controlled Rectifiers
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de MCR8S (archivo pdf) en la parte inferior de esta página.


Total 2 Páginas

No Preview Available ! MCR8S Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
Blocking Voltage to 800 Volts
On-State Current Rating of 8 Amperes RMS
High Surge Current Capability — 90 Amperes
Industry Standard TO–220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
Low Trigger Currents, 200µA Maximum for Direct Driving from Integrated Circuits
Order this document
by MCR8S/D
MCR8S
SERIES*
*Motorola preferred devices
SCRs
8 AMPERES RMS
400 thru 800
VOLTS
A
K
A
G
CASE 221A–06
(TO-220AB)
Style 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 110°C; RGK = 1.0 K)
MCR8SD
MCR8SM
MCR8SN
VDRM
VRRM
Volts
400
600
800
On-State RMS Current
(All Conduction Angles)
IT(RMS)
8A
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
90 A
34 A2sec
Peak Gate Power (Pulse Width 1.0 µs, TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Peak Gate Current (Pulse Width 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
5.0
0.5
2.0
– 40 to +110
– 40 to +150
Watts
Watts
A
°C
°C
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
RθJC
RθJA
2.2 °C/W
62.5
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
TL
260 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1

1 page





PáginasTotal 2 Páginas
PDF Descargar[ Datasheet MCR8S.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MCR8SCRs 8 AMPERES RMS 400 thru 800 VOLTSMotorola Semiconductors
Motorola Semiconductors
MCR80(MCR80 - MCR82) Thyristors PNPNETC
ETC
MCR81(MCR80 - MCR82) Thyristors PNPNETC
ETC
MCR82(MCR80 - MCR82) Thyristors PNPNETC
ETC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar